Intercalation reactions are highly dependent on the electronic and structural relationships between host and guest materials. It is difficult for divalent ions, such as Mg, to undergo intercalation reactions compared with monovalent cations. However, further development of synthetic techniques for controlling divalent ions is strongly demanded to advance applied chemistry and fundamental physics.
View Article and Find Full Text PDFAnhydrous silicophosphoric acid glass with an approximate composition of H Si P O was synthesized and its thermal and proton-conducting properties were characterized. Despite exhibiting a glass transition at 192 °C, the supercooled liquid could be handled as a solid up to 280 °C owing to its high viscosity. The glass and its melt exhibited proton conduction with a proton transport number of ∼1.
View Article and Find Full Text PDFWe report on the optoelectronic characterization of Ge p-i-n infrared photodetector fabricated on Ge-on-Si substrate using rapid thermal chemical vapor deposition (RTCVD). The phosphorous doping concentration and the root mean square (RMS) surface roughness of epitaxial layer was estimated to be 2 x 10(18) cm(-3) and 1.2 nm, respectively.
View Article and Find Full Text PDFWe demonstrate locally contacted PEDOT:PSS Schottky diodes with excellent rectifying behavior, fabricated on n-type Si substrates using a spin-coating process and a reactive-ion etching process. Electrical transport characterizations of these Schottky diodes were investigated by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. We found that these devices exhibit excellent modulation in the current with an on/off ratio of - 10(6).
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