Graphene-Quantum Dot Hybrid Photodetectors with Low Dark-Current Readout.

Graphene-based photodetectors have shown responsivities up to 10 A/W and photoconductive gains up to 10 electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity to graphene, which induces a shift of the graphene chemical potential upon absorption, hence modifying its channel resistance. However, due to the semimetallic nature of graphene, the readout requires dark currents of hundreds of microamperes up to milliamperes, leading to high power consumption needed for the device operation.

Growth of Ultraflat Graphene with Greatly Enhanced Mechanical Properties.

Graphene grown on Cu by chemical vapor deposition is rough due to the surface roughening of Cu for releasing interfacial thermal stress and/or graphene bending energy. The roughness degrades the electrical conductance and mechanical strength of graphene. Here, by using vicinal Cu(111) and flat Cu(111) as model substrates, we investigated the critical role of original surface topography on the surface deformation of Cu covered by graphene.

Far-field excitation of single graphene plasmon cavities with ultracompressed mode volumes.

Acoustic graphene plasmons are highly confined electromagnetic modes carrying large momentum and low loss in the mid-infrared and terahertz spectra. However, until now they have been restricted to micrometer-scale areas, reducing their confinement potential by several orders of magnitude. Using a graphene-based magnetic resonator, we realized single, nanometer-scale acoustic graphene plasmon cavities, reaching mode volume confinement factors of ~5 × 10 Such a cavity acts as a mid-infrared nanoantenna, which is efficiently excited from the far field and is electrically tunable over an extremely large broadband spectrum.

Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fields.

We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board containing the device under test and thereby parallel to the magnetic field. The measured amplitude and phase of the output signal allows for the separation of the total impedance into an absolute capacitance and a resistance.

High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition.

We report high room-temperature mobility in single-layer graphene grown by chemical vapor deposition (CVD) after wet transfer on SiO and hexagonal boron nitride (hBN) encapsulation. By removing contaminations, trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to ∼70000 cm V s at room temperature and ∼120 000 cm V s at 9K. These are more than twice those of previous wet-transferred graphene and comparable to samples prepared by dry transfer.

Detecting Ultrasound Vibrations with Graphene Resonators.

Ultrasound detection is one of the most-important nondestructive subsurface characterization tools for materials, the goal of which is to laterally resolve the subsurface structure with nanometer or even atomic resolution. In recent years, graphene resonators have attracted attention for their use in loudspeakers and ultrasound radios, showing their potential for realizing communication systems with air-carried ultrasound. Here, we show a graphene resonator that detects ultrasound vibrations propagating through the substrate on which it was fabricated.

Fabrication of comb-drive actuators for straining nanostructured suspended graphene.

We report on the fabrication and characterization of an optimized comb-drive actuator design for strain-dependent transport measurements on suspended graphene. We fabricate devices from highly p-doped silicon using deep reactive ion etching with a chromium mask. Crucially, we implement a gold layer to reduce the device resistance from ≈51.

Tailoring Mechanically Tunable Strain Fields in Graphene.

There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly used so far either couple the electrical and mechanical properties of the system simultaneously or introduce some unwanted disturbances due to the substrate. Here, we report on silicon micromachined comb-drive actuators to controllably and reproducibly induce strain in a suspended graphene sheet in an entirely mechanical way.

Spatial Control of Laser-Induced Doping Profiles in Graphene on Hexagonal Boron Nitride.

We present a method to create and erase spatially resolved doping profiles in graphene-hexagonal boron nitride heterostructures. The technique is based on photoinduced doping by a focused laser beam and does neither require masks nor photoresists. This makes our technique interesting for rapid prototyping of unconventional electronic device schemes, where the spatial resolution of the rewritable, long-term stable doping profiles is limited by only the laser spot size (≈600 nm) and the accuracy of sample positioning.

Direct Observation of a Gate Tunable Band Gap in Electrical Transport in ABC-Trilayer Graphene.

Few layer graphene systems such as Bernal stacked bilayer and rhombohedral (ABC-) stacked trilayer offer the unique possibility to open an electric field tunable energy gap. To date, this energy gap has been experimentally confirmed in optical spectroscopy. Here we report the first direct observation of the electric field tunable energy gap in electronic transport experiments on doubly gated suspended ABC-trilayer graphene.

Limitations to carrier mobility and phase-coherent transport in bilayer graphene.

We present transport measurements on high-mobility bilayer graphene fully encapsulated in hexagonal boron nitride. We show two terminal quantum Hall effect measurements which exhibit full symmetry broken Landau levels at low magnetic fields. From weak localization measurements, we extract gate-tunable phase-coherence times τϕ as well as the inter- and intravalley scattering times τi and τ*, respectively.