Electrochemical synthesis of n-type ZnS layers on p-CuO/n-ZnO heterojunctions with different deposition temperatures.

Metal oxide p-n heterojunctions consisting of p-CuO/n-ZnO/n-ZnS nanostructures were deposited on an ITO substrate by three-step electrodeposition. The effect of ZnS layer deposition temperature on the properties of the heterojunction was investigated by different techniques. The Mott-Schottky analysis confirmed the n-type conductivity for ZnO and ZnS and p-type conductivity for the CuO layer, respectively.