Ratio of 4:1 between ZnGeAsand MnAs phases in a single composite and its impact on the structure-driven magnetoresistance.

A strong influence of the lattice degree of freedom on magnetoresistance (MR) under high pressure underlies the conception of 'structure-driven' magnetoresistance (SDMR). In most magnetic or topological materials, the suppression of MR with increasing pressure is a general trend, while for some magnetic composites the MR enhances and even shows unusual behavior as a consequence of structural transition. Here we investigated the SDMR in the composite material based on the ZnGeAssemiconductor matrix and MnAs magnetic inclusions in a phase ratio of 4:1.