Wide-Field Magnetic Field and Temperature Imaging Using Nanoscale Quantum Sensors.

The simultaneous imaging of magnetic fields and temperature (MT) is important in a range of applications, including studies of carrier transport and semiconductor device characterization. Techniques exist for separately measuring temperature (e.g.

High Heat Flux Evaporation of Low Surface Tension Liquids from Nanoporous Membranes.

Water is often considered as the highest performance working fluid for liquid-vapor phase change due to its high thermal conductivity and large enthalpy of vaporization. However, a wide range of industrial systems require using low surface tension liquids where heat transfer enhancement has proved challenging for boiling and evaporation. Here, we enable a new paradigm of phase change heat transfer, which favors high volatility, low surface tension liquids rather than water.

Thermal Expansion Coefficient of Monolayer Molybdenum Disulfide Using Micro-Raman Spectroscopy.

Atomically thin two-dimensional (2D) materials have shown great potential for applications in nanoscale electronic and optical devices. A fundamental property of these 2D flakes that needs to be well-characterized is the thermal expansion coefficient (TEC), which is instrumental to the dry transfer process and thermal management of 2D material-based devices. However, most of the current studies of 2D materials' TEC extensively rely on simulations due to the difficulty of performing experimental measurements on an atomically thin, micron-sized, and optically transparent 2D flake.

Nanoporous membrane device for ultra high heat flux thermal management.

High power density electronics are severely limited by current thermal management solutions which are unable to dissipate the necessary heat flux while maintaining safe junction temperatures for reliable operation. We designed, fabricated, and experimentally characterized a microfluidic device for ultra-high heat flux dissipation using evaporation from a nanoporous silicon membrane. With ~100 nm diameter pores, the membrane can generate high capillary pressure even with low surface tension fluids such as pentane and R245fa.

Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy.

As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging.

Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy.

Micro-Raman thermography is one of the most popular techniques for measuring local temperature rise in gallium nitride (GaN) high electron mobility transistors with high spatial and temporal resolution. However, accurate temperature measurements based on changes in the Stokes peak positions of the GaN epitaxial layers require properly accounting for the stress and/or strain induced by the inverse piezoelectric effect. It is common practice to use the pinched OFF state as the unpowered reference for temperature measurements because the vertical electric field in the GaN buffer that induces inverse piezoelectric stress/strain is relatively independent of the gate bias.