Fast and accurate prediction of material properties with three-body tight-binding model for the periodic table.

Parametrized tight-binding models fit to first-principles calculations can provide an efficient and accurate quantum mechanical method for predicting properties of molecules and solids. However, well-tested parameter sets are generally only available for a limited number of atom combinations, making routine use of this method difficult. Furthermore, many previous models consider only simple two-body interactions, which limits accuracy.

High-Throughput DFT-Based Discovery of Next Generation Two-Dimensional (2D) Superconductors.

High-throughput density functional theory (DFT) calculations allow for a systematic search for conventional superconductors. With the recent interest in two-dimensional (2D) superconductors, we used a high-throughput workflow to screen over 1000 2D materials in the JARVIS-DFT database and performed electron-phonon coupling calculations, using the McMillan-Allen-Dynes formula to calculate the superconducting transition temperature () for 165 of them. Of these 165 materials, we identify 34 dynamically stable structures with transition temperatures above 5 K, including materials such as WN, NbO, ZrBrO, TiClO, NaSnS, MgBC, and the previously unreported MgBN ( = 21.

Magnon-phonon hybridization in 2D antiferromagnet MnPSe.

Magnetic excitations in van der Waals (vdW) materials, especially in the two-dimensional (2D) limit, are an exciting research topic from both the fundamental and applied perspectives. Using temperature-dependent, magneto-Raman spectroscopy, we identify the hybridization of two-magnon excitations with two phonons in manganese phosphorus triselenide (MnPSe), a magnetic vdW material that hosts in-plane antiferromagnetism. Results from first-principles calculations of the phonon and magnon spectra further support our identification.

Database of Wannier tight-binding Hamiltonians using high-throughput density functional theory.

Wannier tight-binding Hamiltonians (WTBH) provide a computationally efficient way to predict electronic properties of materials. In this work, we develop a computational workflow for high-throughput Wannierization of density functional theory (DFT) based electronic band structure calculations. We apply this workflow to 1771 materials (1406 3D and 365 2D), and we create a database with the resulting WTBHs.

Computational scanning tunneling microscope image database.

We introduce the systematic database of scanning tunneling microscope (STM) images obtained using density functional theory (DFT) for two-dimensional (2D) materials, calculated using the Tersoff-Hamann method. It currently contains data for 716 exfoliable 2D materials. Examples of the five possible Bravais lattice types for 2D materials and their Fourier-transforms are discussed.

Distinct magneto-Raman signatures of spin-flip phase transitions in CrI.

The discovery of 2-dimensional (2D) materials, such as CrI, that retain magnetic ordering at monolayer thickness has resulted in a surge of both pure and applied research in 2D magnetism. Here, we report a magneto-Raman spectroscopy study on multilayered CrI, focusing on two additional features in the spectra that appear below the magnetic ordering temperature and were previously assigned to high frequency magnons. Instead, we conclude these modes are actually zone-folded phonons.

Data-driven discovery of 3D and 2D thermoelectric materials.

In this work, we first perform a systematic search for high-efficiency three-dimensional (3D) and two-dimensional (2D) thermoelectric materials by combining semiclassical transport techniques with density functional theory (DFT) calculations and then train machine-learning models on the thermoelectric data. Out of 36 000 three-dimensional and 900 two-dimensional materials currently in the publicly available JARVIS-DFT database, we identify 2932 3D and 148 2D promising thermoelectric materials using a multi-steps screening procedure, where specific thresholds are chosen for key quantities like bandgaps, Seebeck coefficients and power factors. We compute the Seebeck coefficients for all the materials currently in the database and validate our calculations by comparing our results, for a subset of materials, to experimental and existing computational datasets.

High-throughput Density Functional Perturbation Theory and Machine Learning Predictions of Infrared, Piezoelectric and Dielectric Responses.

Many technological applications depend on the response of materials to electric fields, but available databases of such responses are limited. Here, we explore the infrared, piezoelectric and dielectric properties of inorganic materials by combining high-throughput density functional perturbation theory and machine learning approaches. We compute Γ-point phonons, infrared intensities, Born-effective charges, piezoelectric, and dielectric tensors for 5015 non-metallic materials in the JARVIS-DFT database.

High-throughput Discovery of Topologically Non-trivial Materials using Spin-orbit Spillage.

We present a novel methodology to identify topologically non-trivial materials based on band inversion induced by spin-orbit coupling (SOC) effect. Specifically, we compare the density functional theory (DFT) based wavefunctions with and without spin-orbit coupling and compute the 'spin-orbit-spillage' as a measure of band-inversion. Due to its ease of calculation, without any need for symmetry analysis or dense k-point interpolation, the spillage is an excellent tool for identifying topologically non-trivial materials.

High-throughput first principles search for new ferroelectrics.

We use a combination of symmetry analysis and high-throughput density functional theory calculations to search for new ferroelectric materials. We use two search strategies to identify candidate materials. In the first strategy, we start with non-polar materials and look for unrecognized energy-lowering polar distortions.

Flux States and Topological Phases from Spontaneous Time-Reversal Symmetry Breaking in CrSi(Ge)Te_{3}-Based Systems.

We study adatom-covered single layers of CrSiTe_{3} and CrGeTe_{3} using first-principles calculations based on hybrid functionals. We find that the insulating ground state of a monolayer of La (Lu) deposited on single-layer CrSiTe_{3} (CrGeTe_{3}) carries spontaneously generated current loops around the Cr sites. These "flux states" induce antiferromagnetically ordered orbital moments on the Cr sites and are also associated with nontrivial topological properties.

First principles search for -type oxide, nitride, and sulfide thermoelectrics.

Oxides have many potentially desirable characteristics for thermoelectric applications, including low cost and stability at high temperatures, but thus far there are few known high -type oxide thermoelectrics. In this work, we use high-throughput first principles calculations to screen transition metal oxides, nitrides, and sulfides for candidate materials with high power factors and low thermal conductivity. We find a variety of promising materials, and we investigate these materials in detail in order to understand the mechanisms that cause them to have high power factors.

Reproducibility in density functional theory calculations of solids.

The widespread popularity of density functional theory has given rise to an extensive range of dedicated codes for predicting molecular and crystalline properties. However, each code implements the formalism in a different way, raising questions about the reproducibility of such predictions. We report the results of a community-wide effort that compared 15 solid-state codes, using 40 different potentials or basis set types, to assess the quality of the Perdew-Burke-Ernzerhof equations of state for 71 elemental crystals.

Hyperferroelectrics: proper ferroelectrics with persistent polarization.

All known proper ferroelectrics are unable to polarize normal to a surface or interface if the resulting depolarization field is unscreened, but there is no fundamental principle that enforces this behavior. In this work, we introduce hyperferroelectrics, a new class of proper ferroelectrics which polarize even when the depolarization field is unscreened, this condition being equivalent to instability of a longitudinal optic mode in addition to the transverse-optic-mode instability characteristic of proper ferroelectrics. We use first-principles calculations to show that several recently discovered hexagonal ferroelectric semiconductors have this property, and we examine its consequences both in the bulk and in a superlattice geometry.

Chern insulators from heavy atoms on magnetic substrates.

We propose searching for Chern insulators by depositing atomic layers of elements with large spin-orbit coupling (e.g., Bi) on the surface of a magnetic insulator.

Orthorhombic ABC semiconductors as antiferroelectrics.

We use a first-principles rational-design approach to identify a previously unrecognized class of antiferroelectric materials in the Pnma MgSrSi structure type. The MgSrSi structure type can be described in terms of antipolar distortions of the nonpolar P6(3)/mmc ZrBeSi structure type, and we find many members of this structure type are close in energy to the related polar P6(3)mc LiGaGe structure type, which includes many members we predict to be ferroelectric. We highlight known ABC combinations in which this energy difference is comparable to the antiferroelectric-ferroelectric switching barrier of PbZrO(3).

Hexagonal ABC semiconductors as ferroelectrics.

We use a first-principles rational-design approach to identify a previously unrecognized class of ferroelectric materials in the P6(3)mc LiGaGe structure type. We calculate structural parameters, polarization, and ferroelectric well depths both for reported and as-yet hypothetical representatives of this class. Our results provide guidance for the experimental realization and further investigation of high-performance materials suitable for practical applications.

Crystalline oxides on silicon.

This review outlines developments in the growth of crystalline oxides on the ubiquitous silicon semiconductor platform. The overall goal of this endeavor is the integration of multifunctional complex oxides with advanced semiconductor technology. Oxide epitaxy in materials systems achieved through conventional deposition techniques is described first, followed by a description of the science and technology of using atomic layer-by-layer deposition with molecular beam epitaxy (MBE) to systematically construct the oxide-silicon interface.