Tunable spin injection and detection across a van der Waals interface.

Van der Waals heterostructures with two-dimensional magnets offer a magnetic junction with an atomically sharp and clean interface. This attribute ensures that the magnetic layers maintain their intrinsic spin-polarized electronic states and spin-flipping scattering processes at a minimum level, a trait that can expand spintronic device functionalities. Here, using a van der Waals assembly of ferromagnetic FeGeTe with non-magnetic hexagonal boron nitride and WSe layers, we demonstrate electrically tunable, highly transparent spin injection and detection across the van der Waals interfaces.

Black Phosphorus-IGZO van der Waals Diode with Low-Resistivity Metal Contacts.

There have been a few studies of heterojunctions composed of two-dimensional transition-metal dichalcogenides (TMDs) and an oxide layer, but such studies of high-performance electric and optoelectronic devices are essential. Such heterojunctions with low-resistivity metal contacts are needed by the electronics industry to fabricate efficient diodes and photovoltaic devices. Here, a van der Waals heterojunction composed of p-type black phosphorus (p-BP) and n-type indium-gallium-zinc oxide (n-IGZO) films with low-resistivity metal contacts is reported, and it demonstrates high rectification.