ACS Appl Mater Interfaces
July 2024
Although laminate structures are widely used in electrostatic capacitors, unavoidable heterogeneous interfaces often deteriorate the dielectric properties by impeding film crystallization. In this study, a TiO/ZrO/TiO (TZT) laminate structure, where upper-TiO deposited on the heterogeneous interface was crystallized by plasma-assisted atomic layer annealing (ALA), was investigated. ALA effectively induced the phase transition of the upper-TiO from the amorphous or anatase phase to the rutile phase, leading to an increase in the dielectric constant, whereas the ZrO blocking interlayer maintained the amorphous phase owing to the extremely localized effect of ALA.
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