Traditional Potentiometric Ion-selective Electrodes (ISE) are widely used in industrial and clinical settings. The simplicity and small footprint of ISE have encouraged their recent adoption as wearable/implantable sensors for personalized healthcare and precision agriculture, creating a new set of unique challenges absent in traditional ISE. In this paper, we develop a fundamental physics-based model to describe both steady-state and transient responses of ISE relevant for wearable/implantable sensors.
View Article and Find Full Text PDFInfrared (IR) imaging has become a viable tool for visualizing various chemical bonds in a specimen. The performance, however, is limited in terms of spatial resolution and imaging speed. Here, instead of measuring the loss of the IR beam, we use a pulsed visible light for high-throughput, widefield sensing of the transient photothermal effect induced by absorption of single mid-IR pulses.
View Article and Find Full Text PDFThe field of thermoplasmonics has thrived in the past decades because it uniquely provides remotely controllable nanometer-scale heat sources that have augmented numerous technologies. Despite the extensive studies on steady-state plasmonic heating, the dynamic behavior of the plasmonic heaters in the nanosecond regime has remained largely unexplored, yet such a time scale is indeed essential for a broad range of applications such as photocatalysis, optical modulators, and detectors. Here, we use two distinct techniques based on the temperature-dependent surface reflectivity of materials, optical thermoreflectance imaging (OTI) and time-domain thermoreflectance (TDTR), to comprehensively investigate plasmonic heating in both spatial and temporal domains.
View Article and Find Full Text PDFThe so-called Boltzmann tyranny defines the fundamental thermionic limit of the subthreshold slope of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV dec at room temperature and therefore precludes lowering of the supply voltage and overall power consumption . Adding a ferroelectric negative capacitor to the gate stack of a MOSFET may offer a promising solution to bypassing this fundamental barrier . Meanwhile, two-dimensional semiconductors such as atomically thin transition-metal dichalcogenides, due to their low dielectric constant and ease of integration into a junctionless transistor topology, offer enhanced electrostatic control of the channel .
View Article and Find Full Text PDFThe self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution thermoreflectance imaging technique, the direct self-heating effect and surface temperature increase phenomenon are observed on novel top-gate β-GaO on insulator field-effect transistors. Here, we demonstrate that by utilizing a higher thermal conductivity sapphire substrate rather than a SiO/Si substrate, the temperature rise above room temperature of β-GaO on the insulator field-effect transistor can be reduced by a factor of 3 and thereby the self-heating effect is significantly reduced.
View Article and Find Full Text PDFDuring routine operation, electrically percolating nanocomposites are subjected to high voltages, leading to spatially heterogeneous current distribution. The heterogeneity implies localized self-heating that may (self-consistently) reroute the percolation pathways and even irreversibly damage the material. In the absence of experiments that can spatially resolve the current distribution and a nonlinear percolation model suitable to interpret them, one relies on empirical rules and safety factors to engineer these materials.
View Article and Find Full Text PDFThis microsupercapacitor ageing study demonstrates the usefulness of the electroreflectance technique by quantifying local charge accumulation. Two separate devices with interdigitated electrodes were evaulated over a period of 4.1 million charge/discharge cycles.
View Article and Find Full Text PDFElectroreflectance microscopy is demonstrated as a high-resolution, non-contact method to image dynamic charge distribution in integrated microsupercapacitor structures during fast voltage cycling. Electroreflectance camera images of a gold electrode H3PO4 polymer electrolyte microsupercapacitor reveal time varying charge distribution with submicron spatial resolution, millisecond time resolution, and electroreflectance resolution on the order of 500 nC cm(-2). A model describing changes in the metal electrode's optical constants as a function of free electron concentration shows good agreement with measured electroreflectance.
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