Separation of Neighboring Terraces on a Flattened Si(111) Surface by Selective Etching along Step Edges Using Total Wet Chemical Processing.

We propose a bottom-up technique using total wet chemical treatments to separate neighboring terraces on Si(111). First, Ag cations were reduced at the step edges of a vicinal Si(111) surface composed of biatomic steps and flat terraces, resulting in self-assembled Ag rows consisting of nanodots and nanowires. By immersing this sample into a mixed solution of HF and HO, almost continuous nanotrenches with depths and widths of nanometer scales were fabricated along the edges.

Damage-free highly efficient plasma-assisted polishing of a 20-mm square large mosaic single crystal diamond substrate.

Plasma-assisted polishing (PAP) as a damage-free and highly efficient polishing technique has been widely applied to difficult-to-machine wide-gap semiconductor materials such as 4H-SiC (0001) and GaN (0001). In this study, a 20-mm square large mosaic single crystal diamond (SCD) substrate synthesized by microwave plasma chemical vapor deposition (CVD) was polished by PAP. Argon-based plasma containing oxygen was used in PAP to modify the surface of quartz glass polishing plate, and a high material removal rate (MRR) of 13.

Surface Modification and Microstructuring of 4H-SiC(0001) by Anodic Oxidation with Sodium Chloride Aqueous Solution.

Anodic oxidation is a promising surface modification technique for the manufacture of SiC wafers owing to its high oxidation rate. It is also possible to fabricate porous SiC by anodic oxidation and etching owing to the material properties of SiC. In this study, the anodic oxidation of a 4H-SiC(0001) surface was investigated by performing repeated anodic oxidation and hydrofluoric acid etching on a 4H-SiC(0001) surface, during which the formation of porous SiC was observed and studied.

Absolute flatness measurements of silicon mirrors by a three-intersection method by near-infrared interferometry.

Absolute flatness of three silicon plane mirrors have been measured by a three-intersection method based on the three-flat method using a near-infrared interferometer. The interferometer was constructed using a near-infrared laser diode with a 1,310-nm wavelength light where the silicon plane mirror is transparent. The height differences at the coordinate values between the absolute line profiles by the three-intersection method have been evaluated.

Metal-assisted chemical etching of Ge(100) surfaces in water toward nanoscale patterning.

We propose the metal-assisted chemical etching of Ge surfaces in water mediated by dissolved oxygen molecules (O2). First, we demonstrate that Ge surfaces around deposited metallic particles (Ag and Pt) are preferentially etched in water. When a Ge(100) surface is used, most etch pits are in the shape of inverted pyramids.

Mechanism of atomic-scale passivation and flattening of semiconductor surfaces by wet-chemical preparations.

Atomic arrangements of Si(001), Si(110) and 4H-SiC(0001) surfaces after wet-chemical preparations are investigated with scanning tunneling microscopy. Their passivated structures as well as the surface formation mechanisms in aqueous solutions are discussed. On both Si(001) and Si(110) surfaces, simple 1 × 1 phases terminated by H atoms are clearly resolved after dilute HF dipping.

Efficient wet etching of GaN (0001) substrate with subsurface damage layer.

Photoenhanced chemical (PEC) etching is applicable for processing an n-GaN (0001) surface rapidly. In this process, the surface oxidation is enhanced by photo-generated holes and the resulting oxide can dissolve into solutions. In current work, we conduct bias-assisted PEC etching in a KOH solution with a positively biased wafer, to remove the crystallographically highly damaged layer.

Characterization of terraces and steps on Cl-terminated Ge(111) surfaces after HCl treatment in N2 ambient.

Germanium (Ge) is a promising substrate for semiconductor devices in the near future. However, wet-chemical preparations that enable the control of the structure of the Ge surface have not yet been developed. In this study, the surface structure of Ge(111) after HCl treatment is characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and scanning tunneling microscopy (STM).

Selective adsorption of organosilane molecules along step edges of atomically flattened Si(111) surfaces.

We investigate the selective adsorption of organosilane molecules (3-aminopropyltriethoxysilane (APTES) and octadecyltrichlorosilane (OTS)) at the step edges of a flattened Si(111) surface by atomic force microscopy. The flattened Si(111) surface is formed by dipping a vicinal Si(111) wafer into ultralow-dissolved-oxygen water after treatment with HF. The selective adsorption of these organosilanes is achieved only when the Si(111) sample is pretreated with a Cu-containing solution to form Cu wires along the step edges of the Si(111) surface.

Dependence of process characteristics on atomic-step density in catalyst-referred etching of 4H-SiC(0001) surface.

Catalyst-referred etching (CARE) is a novel abrasive-free planarization method. CARE-processed 4H-SiC(0001) surfaces are extremely flat and undamaged over the whole wafer. They consist of single-bilayer-height atomic steps and atomically flat terraces.

Structure and magnetic properties of mono- and bi-layer graphene films on ultraprecision figured 4H-SiC(0001) surfaces.

Monolayer and bilayer graphene films with a few hundred nm domain size were grown on ultraprecision figured 4H-SiC(0001) on-axis and 8 degrees -off surfaces by annealing in ultra-high vacuum. Using X-ray photoelectron spectroscopy (XPS), atomic force microscopy, reflection high-energy electron diffraction, low-energy electron diffraction (LEED), Raman spectroscopy, and scanning tunneling microscopy, we investigated the structure, number of graphene layers, and chemical bonding of the graphene surfaces. Moreover, the magnetic property of the monolayer graphene was studied using in-situ surface magneto-optic Kerr effect at 40 K.

Improved optical and electrical characteristics of free-standing GaN substrates by chemical polishing utilizing photo-electrochemical method.

The optical and electrical properties of GaN(0001) surfaces treated by a novel chemical polishing method are described. Scanning microscopic photoluminescence images reveal that the polished GaN surface shows improved luminescence properties compared to the untreated surface. Current-voltage measurements of Schottky barriers formed using the GaN substrates show that the polished GaN surface has a lower reverse leakage current, and that the barrier height and ideality factor are improved after the polishing treatment.

Center of excellence for atomically controlled fabrication technology.

This short review aims to show the introduction of the educational and research program of "Center of excellence of atomically controlled fabrication technology" supported ministry of education, culture, sports, science and technology--Japan. We would like to introduce research activity and a unique trait of educational system.

Ion segregation and deliquescence of alkali halide nanocrystals on SiO2.

The adsorption of water on alkali halide (KBr, KCl, KF, NaCl) nanocrystals on SiO2 and their deliquescence was investigated as a function of relative humidity (RH) from 8% to near saturation by scanning polarization force microscopy. At low humidity, water adsorption solvates ions at the surface of the crystals and increases their mobility. This results in a large increase in the dielectric constant, which is manifested in an increase in the electrostatic force and in an increase in the apparent height of the nanocrystals.

Metal-insulator-gap-insulator-semiconductor structure for sensing devices.

We report on the use of sensing devices that have a metal-insulator-gap-insulator-semiconductor structure. We have used capacitance-voltage measurements from a metal-insulator-gap-insulator-semiconductor sensing device to characterize different pH solutions and deoxyribonucleic acid (DNA) solutions. Hysteresis in the capacitance-voltage curves results from mobile ionic charges in the solutions and the influence of changes on the sensing surface condition.

FTIR-ATR evaluation of organic contaminant cleaning methods for SiO2 surfaces.

The effectiveness of cleaning organic contaminants from silicon dioxide (SiO2) surfaces was studied by conducting highly sensitive measurements using Fourier Transform Infrared Attenuated Total reflectance (FTIR-ATR) with a Si prism as the waveguide. To serve as an example, the surface of the prism was oxidized to an order of a few nanometers. The oxidized Si surface film was allowed to stand in the atmosphere and then wet-cleaned in a repeated manner; subsequently its thickness was measured by ellipsometry.