Publications by authors named "Kent A Hallman"

Article Synopsis
  • Solid-state systems can have various thermodynamic phases influenced by factors like magnetic fields and strain; however, studying these nanoscale phases is challenging due to the need for high spatial resolution and detailed spectroscopic data.
  • The researchers utilize coherent diffractive imaging spectroscopy (CDIS) to obtain detailed hyperspectral images of vanadium oxide, examining its different phases at the nanoscale.
  • They discover that there are no phase transitions driven by correlations in the material, and highlight that CDIS could advance quantitative study in complex environments where traditional methods fall short.
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We use resonant soft X-ray holography to image the insulator-metal phase transition in vanadium dioxide with element and polarization specificity and nanometer spatial resolution. We observe that nanoscale inhomogeneity in the film results in spatial-dependent transition pathways between the insulating and metallic states. Additional nanoscale phases form in the vicinity of defects which are not apparent in the initial or final states of the system, which would be missed in area-integrated X-ray absorption measurements.

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Phase-change materials (PCMs) have emerged as promising active elements in silicon (Si) photonic systems. In this work, we design, fabricate, and characterize a hybrid Si-PCM optical switch. By integrating vanadium dioxide (a PCM) within a Si photonic waveguide, in a non-resonant geometry, we achieve ~10 dB broadband optical contrast with a PCM length of 500 nm using thermal actuation.

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Vanadium dioxide (VO(2)) is a promising reconfigurable optical material and has long been a focus of condensed matter research owing to its distinctive semiconductor-to-metal phase transition (SMT), a feature that has stimulated recent development of thermally reconfigurable photonic, plasmonic, and metamaterial structures. Here, we integrate VO(2) onto silicon photonic devices and demonstrate all-optical switching and reconfiguration of ultra-compact broadband Si-VO(2) absorption modulators (L < 1 μm) and ring-resonators (R ~ λ(0)). Optically inducing the SMT in a small, ~0.

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