Quantum-Confined Stark Effect of Individual Defects in a van der Waals Heterostructure.

The optical properties of atomically thin semiconductor materials have been widely studied because of the isolation of monolayer transition metal dichalcogenides (TMDCs). They have rich optoelectronic properties owing to their large direct bandgap, the interplay between the spin and the valley degree of freedom of charge carriers, and the recently discovered localized excitonic states giving rise to single photon emission. In this Letter, we study the quantum-confined Stark effect of these localized emitters present near the edges of monolayer tungsten diselenide (WSe).

Direct On-Chip Optical Plasmon Detection with an Atomically Thin Semiconductor.

The determination to develop fast, efficient devices has led to vast studies on photonic circuits but it is difficult to shrink these circuits below the diffraction limit of light. However, the coupling between surface plasmon polaritons and nanostructures in the near-field shows promise in developing next-generation integrated circuitry. In this work, we demonstrate the potential for integrating nanoplasmonic-based light guides with atomically thin materials for on-chip near-field plasmon detection.

Voltage-controlled quantum light from an atomically thin semiconductor.

Although semiconductor defects can often be detrimental to device performance, they are also responsible for the breadth of functionality exhibited by modern optoelectronic devices. Artificially engineered defects (so-called quantum dots) or naturally occurring defects in solids are currently being investigated for applications ranging from quantum information science and optoelectronics to high-resolution metrology. In parallel, the quantum confinement exhibited by atomically thin materials (semi-metals, semiconductors and insulators) has ushered in an era of flatland optoelectronics whose full potential is still being articulated.