Publications by authors named "Kenji Hiruma"
We study the catalyst-free growth of InP nanowires using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) and show that they undergo transition of crystal structures depending on the growth conditions. InP nanowires were grown on InP substrates where the mask for the template of the growth was defined. The nanowires were grown only in the opening region of the mask.
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- The research focuses on integrating GaAs nanowire-based light-emitting diodes (NW-LEDs) on silicon (Si) substrates using a selective-area growth technique.
- The team successfully created vertically aligned GaAs/AlGaAs nanowires featuring a radial p-n junction that demonstrates effective electroluminescence.
- The findings suggest that the current technology could pave the way for advanced integration of III-V nanowires with silicon for future electronic and photonic applications.
GaAs nanowires were selectively grown by metal-organic vapour-phase epitaxy within a SiO(2) mask window pattern fabricated on a GaAs(111)B substrate surface. The nanowires were 100-3000 nm in height and 50-300 nm in diameter. The height decreased as the mask window diameter was increased or the growth temperature was increased from 700 to 800 °C.
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