Ionic Liquid Crystal Thin Film as Switching Layer in Nonvolatile Resistive Memory.

In this study, we propose the use of an ionic liquid crystal (ILC) as a new resistive switching layer in nonvolatile resistive random-access memory (ReRAM) devices. The high-quality vacuum-deposited ILC films of 1-hexadecyl-3-methylimidazolium hexafluorophosphate ([Cmim][PF]) enabled to demonstrate the first operation of ReRAM devices with a low set voltage of ∼1 V and stable switching behavior for up to ∼44 cycles. The key to the successful operation is that the ILC layer is in the liquid crystal phase (smectic A), where the electric double layers formed at the electrode-ILC interfaces play a significant role.

Reaction Dynamics of C(NH)SnI Formation from Vacuum-Deposited C(NH)I and SnI Bilayer Thin Films Investigated by Infrared Multiple-Angle Incidence-Resolved Spectroscopy.

Understanding the formation process of organic-inorganic halide perovskite (OIHP) thin films is important for the fabrication of high-quality thin films, which, in turn, are crucial for achieving high-performance devices. To address this challenge, we developed an system of infrared multiple-angle incidence-resolved spectroscopy (IR-MAIRS) combined with a vacuum deposition system. "Orientation-free" isotropic spectra constructed from IR-MAIRS spectra enable us to perform quantitative analysis of the formation process of C(NH)SnI (GASnI) thin films from unreacted C(NH)I (guanidine hydroiodide (GAI))/SnI bilayer structures predeposited in a vacuum.

A high- heavy rare earth monoxide semiconductor TbO with a more than half-filled 4f orbital.

Terbium monoxide, TbO, with an unusual valence state of Tb ([Xe]4f5d) has been known to exist as a gas phase. In this study, we report a solid phase rock-salt structured TbO in the form of an epitaxial thin film. This TbO is a narrow gap ferromagnetic semiconductor with a bandgap of ∼0.

New Lutetium Oxide: Electrically Conducting Rock-Salt LuO Epitaxial Thin Film.

C-rare earth structure lutetium sesquioxide LuO has been recognized as a high- widegap insulator with closed shell Lu ions. In this study, rock-salt structure lutetium monoxide LuO with unusual valence of Lu (4f5d), previously known as the gaseous phase, was synthesized as an epitaxial thin film by the pulsed laser deposition method. In contrast with transparent and highly insulating LuO, LuO possessed a dark-brown color and high electrical conductivity concomitant with strong spin-orbit coupling as a manifestation of Lu 5d electron carriers.

Superconductivity of Rock-Salt Structure LaO Epitaxial Thin Film.

We report a superconducting transition in a LaO epitaxial thin film with the superconducting transition onset temperature ( T) at around 5 K. This T is higher than those of other lanthanum monochalcogenides and opposite to their chemical trend: T = 0.84, 1.