Effects of insertion of an h-AlN monolayer spacer in Pt-WSe-Pt field-effect transistors.

The growth of two-dimensional hexagonal aluminum nitride (h-AlN) on transition metal dichalcogenide (TMD) monolayers exhibits superior uniformity and smoothness compared to HfO on silicon substrate. This makes an h-AlN monolayer an ideal spacer between the gate oxide material and the WSe monolayer in a two-dimensional field effect transistor (FET). From first principles approaches, we calculate and compare the transmission functions and current densities of Pt-WSe-Pt nanojunctions without and with the insertion of an h-AlN monolayer as a spacer in the gate architecture.

Evidence of High-Temperature Superconductivity at 18 K in Nanosized Rhombohedral Bi Enhanced by Ni-Doping.

Superconductivity in bulk rhombohedral Bi has recently been detected to appear below 0.53 mK and 5.2 μT.