Flexible Gallium Nitride for High-Performance, Strainable Radio-Frequency Devices.

Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio-frequency (RF) signals over large distances for more efficient wireless communication. For the first time, strainable high-frequency RF GaN devices are demonstrated, whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical-free transfer to a soft, flexible substrate. The AlGaN/GaN heterostructures transferred to flexible substrates are uniaxially strained up to 0.

Incomplete Ionization of a 110 meV Unintentional Donor in β-GaO and its Effect on Power Devices.

Understanding the origin of unintentional doping in GaO is key to increasing breakdown voltages of GaO based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional doping in GaO. Previously unobserved unintentional donors in commercially available [Formula: see text] GaO substrates have been electrically characterized via temperature dependent Hall effect measurements up to 1000 K and found to have a donor energy of 110 meV.