GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE.

The growth mechanism of GaAs nanowires (NWs) grown on polycrystalline silicon (poly-Si) thin films using selective-area metalorganic vapor-phase epitaxy was investigated. Wire structures were selectively grown in the mask openings on a poly-Si substrate. The appearance ratio of wire structures strongly depended on the growth conditions and deposition temperature of the poly-Si substrate.

Bidirectional growth of indium phosphide nanowires.

We present a bidirectional growth mode of InP nanowires grown by selective-area metalorganic vapor-phase epitaxy (SA-MOVPE). We studied the effect of the supply ratio of DEZn ([DEZn]) on InP grown structure morphology and crystal structures during the SA-MOVPE. Two growth regimes were observed in the investigated range of the [DEZn] on an InP(111)B substrate.

Growth characteristics of GaAs nanowires obtained by selective area metal-organic vapour-phase epitaxy.

GaAs nanowires were selectively grown by metal-organic vapour-phase epitaxy within a SiO(2) mask window pattern fabricated on a GaAs(111)B substrate surface. The nanowires were 100-3000 nm in height and 50-300 nm in diameter. The height decreased as the mask window diameter was increased or the growth temperature was increased from 700 to 800 °C.