Targeted elimination of tetravalent-Sn-induced defects for enhanced efficiency and stability in lead-free NIR-II perovskite LEDs.

Eco-friendly Sn-based perovskites show significant potential for high-performance second near-infrared window light-emitting diodes (900 nm - 1700 nm). Nevertheless, achieving efficient and stable Sn-based perovskite second near-infrared window light-emitting diodes remains challenging due to the propensity of Sn to oxidize, resulting in detrimental Sn-induced defects and compromised device performance. Here, we present a targeted strategy to eliminate Sn-induced defects through moisture-triggered hydrolysis of tin tetrahalide, without degrading Sn in the CsSnI film.

Surface Treatment with Tailored π-Conjugated Fluorene Derivatives Significantly Enhances the Performance of Perovskite Light-Emitting Diodes.

Surface defect passivation and carrier injection regulation have emerged as effective strategies for enhancing the performance of perovskite light-emitting diodes (Pero-LEDs). It usually requires two functional molecules to realize defect passivation and carrier injection regulation separately. In other words, developing one single molecule possessing these capabilities remains challenging.

Phase Engineering Reinforced Energy Transfer for High-Performance Blue Perovskite Light-Emitting Diodes.

Layered metal-halide perovskites, a category of self-assembled quantum wells, are of paramount importance in emerging photonic sources, such as lasers and light-emitting diodes (LEDs). Despite high trap density in two-dimensional (2D) perovskites, efficient non-radiative energy funneling from wide- to narrow-bandgap components, sustained by the Förster resonance energy transfer (FRET) mechanism, contributes to efficient luminescence by light or electrical injection. Herein, it is demonstrated that bandgap extension of layered perovskites to the blue-emitting regime will cause sluggish and inefficient FRET, stemming from the tiny spectral overlap between different phases.

Efficient Perovskite Light-Emitting Diodes with Chemically Bonded Contact and Regulated Charge Behavior.

Efficient charge injection and radiative recombination are essential to achieving high-performance perovskite light-emitting diodes (Pero-LEDs). However, the perovskite emission layer (EML) and the electron transport layer (ETL) form a poor physically interfacial contact and non-negligible charge injection barrier, limiting the device performance. Herein, we utilize a phosphine oxide, 2,4,6-tris[3-(diphenylphosphinyl)phenyl]-1,3,5-triazine (PO-T2T), to treat the perovskite/ETL interface and form a chemically bonded contact.

Conductive Phosphine Oxide Passivator Enables Efficient Perovskite Light-Emitting Diodes.

Recently, surface passivation has been proved to be an essential approach for obtaining efficient and stable perovskite light-emitting diodes (Pero-LEDs). Phosphine oxides performed well as passivators in many reports. However, the most commonly used phosphine oxides are insulators, which may inhibit carrier transport between the perovskite emitter and charge-transporter layers, limiting the corresponding device performance.

Distribution control enables efficient reduced-dimensional perovskite LEDs.

Light-emitting diodes (LEDs) based on perovskite quantum dots have shown external quantum efficiencies (EQEs) of over 23% and narrowband emission, but suffer from limited operating stability. Reduced-dimensional perovskites (RDPs) consisting of quantum wells (QWs) separated by organic intercalating cations show high exciton binding energies and have the potential to increase the stability and the photoluminescence quantum yield. However, until now, RDP-based LEDs have exhibited lower EQEs and inferior colour purities.

Dendritic CsSnI for Efficient and Flexible Near-Infrared Perovskite Light-Emitting Diodes.

All-inorganic and lead-free CsSnI is emerging as one of the most promising candidates for near-infrared perovskite light-emitting diodes (NIR Pero-LEDs), which find practical applications including facial recognition, biomedical apparatus, night vision camera, and Light Fidelity. However, in the CsSnI -based Pero-LEDs, the holes injection is significantly higher than that of electrons, resulting in unbalanced charge injection, undesired exciton dissipation, and poor device performance. Herein, it is proposed to manage charge injection and recombination behavior by tuning the interface area of perovskite and charge-transporter.

Efficient and stable inverted perovskite solar cells enabled by inhibition of self-aggregation of fullerene electron-transporting compounds.

Fullerene-based electron-transporting layers (ETLs) significantly influence the defect passivation and device performance of inverted perovskite solar cells (PSCs). However, the π-cage structures of fullerenes lead to a strong tendency to self-aggregate, which affects the long-term stability of the corresponding PSCs. Experimental results revealed that [6,6]-phenyl-C-butyric acid methyl ester (PCBM)-based ETLs exhibit a certain degree of self-aggregation that affects the stability of the device, particularly under continuous irradiation stress.

Composition engineering to obtain efficient hybrid perovskite light-emitting diodes.

Metal halide perovskites have received considerable attention in the field of electroluminescence, and the external quantum efficiency of perovskite light-emitting diodes has exceeded 20%. CHNHPbBr has been intensely investigated as an emitting layer in perovskite light-emitting diodes. However, perovskite films comprising CHNHPbBr often exhibit low surface coverage and poor crystallinity, leading to high current leakage, severe nonradiative recombination, and limited device performance.

Ultrathin PEDOT:PSS Enables Colorful and Efficient Perovskite Light-Emitting Diodes.

Recently, metal halide perovskite light-emitting diodes (Pero-LEDs) have achieved significant improvement in device performance, especially for external quantum efficiency (EQE). And EQE is mostly determined by internal quantum efficiency of the emitting material, charge injection balancing factor (η), and light extraction efficiency (LEE) of the device. Herein, an ultrathin poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (UT-PEDOT:PSS) hole transporter layer is prepared by a water stripping method, and the UT-PEDOT:PSS can enhance η and LEE simultaneously in Pero-LEDs, mostly due to the improved carrier mobility, more matched energy level alignment, and reduced photon loss.

Efficient and Stable Low-Bandgap Perovskite Solar Cells Enabled by a CsPbBr-Cluster Assisted Bottom-up Crystallization Approach.

Recently, low-bandgap formamidinium lead iodide FAPbI-based perovskites are of particular interest for high-performance perovskite solar cells (PSCs) due to their broad spectral response and high photocurrent output. However, to inhibit the spontaneous α-to-δ phase transition, 15-17% (molar ratio) of bromide and cesium or methylammonium incorporated into the FAPbI are indispensable to achieve efficient PSCs. In return, the high bromide content will increase bandgap and narrow the spectral response region.

Exciton-phonon interaction in quasi-two dimensional layered (PEA)(CsPbBr)PbBr perovskite.

Two-dimensional (2D) Ruddlesden-Popper perovskites with bulky organic cations have attracted extensive attention in light-emitting devices and photovoltaics due to their robust environment stability, tunable luminescent color, strong exciton binding and promising efficiency. A quantum well (QW) structure is spontaneously formed by sandwiching PbBr4 layers into bulky organic cations. However, some intrinsic excitonic mechanisms in these materials still need to be elucidated.

Perovskite light-emitting diodes with external quantum efficiency exceeding 20 per cent.

Metal halide perovskite materials are an emerging class of solution-processable semiconductors with considerable potential for use in optoelectronic devices. For example, light-emitting diodes (LEDs) based on these materials could see application in flat-panel displays and solid-state lighting, owing to their potential to be made at low cost via facile solution processing, and could provide tunable colours and narrow emission line widths at high photoluminescence quantum yields. However, the highest reported external quantum efficiencies of green- and red-light-emitting perovskite LEDs are around 14 per cent and 12 per cent, respectively-still well behind the performance of organic LEDs and inorganic quantum dot LEDs.