Pump-degenerate phase-sensitive amplification in amorphous silicon waveguides.

We demonstrate phase-sensitive amplification in hydrogenated amorphous silicon photonic waveguides based on pump-degenerate four-wave mixing at continuous-wave (CW) operation, as well as at repetition rates of both 90 MHz and 10 GHz. At 90 MHz pulsed operation, an 11.7 dB phase-sensitive extinction ratio (ER) is achieved with a peak pump power of 1.

Wavelength multicasting through four-wave mixing with an optical comb source.

Based on four-wave mixing (FWM) with an optical comb source (OCS), we experimentally demonstrate 26-way or 15-way wavelength multicasting of 10-Gb/s differential phase-shift keying (DPSK) data in a highly-nonlinear fiber (HNLF) or a silicon waveguide, respectively. The OCS provides multiple spectrally equidistant pump waves leading to a multitude of FWM products after mixing with the signal. We achieve error-free operation with power penalties less than 5.

Wavelength-agile near-IR optical parametric oscillator using a deposited silicon waveguide.

Using a deposited hydrogenated amorphous silicon (a-Si:H) waveguide, we demonstrate ultra-broad bandwidth (60 THz) parametric amplification via four-wave mixing (FWM), and subsequently achieve the first silicon optical parametric oscillator (OPO) at near-IR wavelengths. Utilization of the time-dispersion-tuned technique provides an optical source with active wavelength tuning over 42 THz with a fixed pump wave.

Non-instantaneous optical nonlinearity of an a-Si:H nanowire waveguide.

We use pump-probe spectroscopy and continuous wave cross-phase and cross-amplitude modulation measurements to study the optical nonlinearity of a hydrogenated amorphous silicon (a-Si:H) nanowire waveguide, and we compare the results to those of a crystalline silicon waveguide of similar dimensions. The a-Si:H nanowire shows essentially zero instantaneous two-photon absorption, but it displays a strong, long-lived non-instantaneous nonlinearity that is both absorptive and refractive. Power scaling measurements show that this non-instantaneous nonlinearity in a-Si:H scales as a third-order nonlinearity, and the refractive component possesses the opposite sign to that expected for free-carrier dispersion.

Multichannel photon-pair generation using hydrogenated amorphous silicon waveguides.

We demonstrate highly efficient photon-pair generation using an 8 mm long hydrogenated amorphous silicon (a-Si:H) waveguide in far-detuned multiple wavelength channels simultaneously, measuring a coincidence-to-accidental ratio as high as 400. We also characterize the contamination from Raman scattering and show it to be insignificant over a spectrum span of at least 5 THz. Our results highlight a-Si:H as a potential high-performance, CMOS-compatible platform for large-scale quantum applications, particularly those based on the use of multiplexed quantum signals.

Highly sensitive ultrafast pulse characterization using hydrogenated amorphous silicon waveguides.

We experimentally demonstrate frequency resolved optical gating (FROG) via four-wave mixing (FWM) in ultrahigh nonlinearity hydrogenated amorphous silicon waveguides. We demonstrate FROG characterization using a FWM architecture that mimics second harmonic generation (SHG) FROG for pulsewidths as low as 360 fs. Additionally, we demonstrate for the first time a FWM architecture analogous to third harmonic generation (THG) FROG and validate its ability to overcome the direction of time ambiguity of the SHG-like architecture.

Ultralow-power all-optical processing of high-speed data signals in deposited silicon waveguides.

Utilizing a 6-mm-long hydrogenated amorphous silicon nanowaveguide, we demonstrate error-free (BER < 10(-9)) 160-to-10 Gb/s OTDM demultiplexing using ultralow switching peak powers of 50 mW. This material is deposited at low temperatures enabling a path toward multilayer integration and therefore massive scaling of the number of devices in a single photonic chip.

Ultralow power continuous-wave frequency conversion in hydrogenated amorphous silicon waveguides.

We demonstrate wavelength conversion through nonlinear parametric processes in hydrogenated amorphous silicon (a-Si:H) with maximum conversion efficiency of -13 dB at telecommunication data rates (10 GHz) using only 15 mW of pump peak power. Conversion bandwidths as large as 150 nm (20 THz) are measured in continuous-wave regime at telecommunication wavelengths. The nonlinear refractive index of the material is determined by four-wave mixing (FWM) to be n(2)=7.