Enhancing the efficiency of InGaN-based micro-LEDs using indium tin oxide p-electrodes.

Here, we demonstrate replacing opaque Cr/Pt/Au metal p-electrodes with transparent indium tin oxide (ITO) p-electrodes to increase the light output of InGaN-based micro-light-emitting diodes (micro-LEDs). ITO p-electrodes exhibit high transmittance of ∼ 80% across the visible spectrum and low resistivity, while metal p-electrodes exhibit negligible transmittance and significant absorption. The 20 × 20 µm and 50 × 50 µm green micro-LED arrays with ITO p-electrodes yield 1.

Innovative Stacked Yellow and Blue Mini-LED Chip for White Lamp Applications.

This study introduces a novel approach for fabricating vertically stacked mini-LED arrays, integrating InGaN yellow and blue epitaxial layers with a stress buffer layer to enhance optoelectronic characteristics and structural stability. This method significantly simplifies the LED design by reducing the need for RGB configurations, thus lowering costs and system complexity. Employing vertical stacking integration technology, the design achieves high-density, efficient white light production suitable for multifunctional applications, including automotive lighting and outdoor signage.

Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs.

This study showcases a method for achieving high-performance yellow and red micro-LEDs through precise control of indium content within quantum wells. By employing a hybrid quantum well structure with our six core technologies, we can accomplish outstanding external quantum efficiency (EQE) and robust stripe bandwidth. The resulting 30 μm × 8 micro-LED arrays exhibit maximum EQE values of 11.

Simultaneous Growth Strategy of High-Optical-Efficiency GaN NWs on a Wide Range of Substrates by Pulsed Laser Deposition.

Here, we explore a catalyst-free single-step growth strategy that results in high-quality self-assembled single-crystal vertical GaN nanowires (NWs) grown on a wide range of common and novel substrates (including GaN, GaO, and monolayer two-dimensional (2D) transition-metal dichalcogenide (TMD)) within the same chamber and thus under identical conditions by pulsed laser deposition. High-resolution transmission electron microscopy and scanning transmission electron microscopy (HR-STEM) and grazing incidence X-ray diffraction measurements confirm the single-crystalline nature of the obtained NWs, whereas advanced optical and cathodoluminescence measurements provide evidence of their high optical quality. Further analyses reveal that the growth is initiated by an polycrystalline layer formed between the NWs and substrates during growth, while as its thickness increases, the growth mode transforms into single-crystalline NW nucleation.

Investigation of N-polar InGaN growth on misoriented ScAlMgO substrates.

We report the growth of N-polar InGaN layers on misoriented ScAlMgO (SAM) substrates with offset of 0.3 to 5.8° toward the m-plane.

Towards the quantification of the chemical mechanism of light-driven water splitting on GaN photoelectrodes.

We present results from a study addressing the unbiased water-splitting process and its side reactions on GaN-based photoelectrodes decorated with NiO, FeO, and CoO nanoparticles. Observations involving physicochemical analyses of liquid and vapour phases after the experiments were performed in 1 M NaOH under ambient conditions. A water-splitting process with GaN-based photoelectrodes results in the generation of hydrogen gas and hydrogen peroxide.

Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications.

In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.

Structural and optical analyses for InGaN-based red micro-LED.

This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL).

Improvement of optical properties of InGaN-based red multiple quantum wells.

The realization of red-emitting InGaN quantum well (QW) is a hot issue in current nitride semiconductor research. It has been shown that using a low-Indium (In)-content pre-well layer is an effective method to improve the crystal quality of red QWs. On the other hand, keeping uniform composition distribution at higher In content in red QWs is an urgent problem to be solved.

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid.

We studied the wet electrochemical etching of n-GaN films in oxalic acid. The electrooxidation processes occur in a potentiostatic mode in the voltage range of 5 to 20 V. We described the formation of the porous n-GaN layer structures in several ways.

Study on the effect of size on InGaN red micro-LEDs.

In this research, five sizes (100 × 100, 75 × 75, 50 × 50, 25 × 25, 10 × 10 µm) of InGaN red micro-light emitting diode (LED) dies are produced using laser-based direct writing and maskless technology. It is observed that with increasing injection current, the smaller the size of the micro-LED, the more obvious the blue shift of the emission wavelength. When the injection current is increased from 0.

Ultra-small InGaN green micro-light-emitting diodes fabricated by selective passivation of p-GaN.

Here, we proposed fabricating ultra-small InGaN-based micro-light-emitting diodes (µLEDs). The selective p-GaN areas were intentionally passivated using a plasma treatment and served as the electrical isolation regions to prevent the current from injecting into the InGaN quantum wells below. Three kinds of green µLEDs, two squircle shapes with widths of 5 and 4 µm and one circular shape with a diameter of 2.

Photoluminescence of InGaN-based red multiple quantum wells.

Optical properties of InGaN-based red LED structure, with a blue pre-well, are reported. Two emission peaks located at 445.1 nm (P) and 617.

Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays.

This study demonstrates the performance improvements of InGaN-based red light-emitting diodes (LEDs) by fabricating micro-holes in the planar mesa. The peak wavelengths of the micro-hole LEDs (MHLEDs) exhibited a blue-shift of around 3 nm compared to the planar LEDs (PLEDs) at the same current density. The lowest full width at half maximum of MHLEDs was 59 nm, which is slightly less than that of the PLEDs.

Investigation of InGaN-based red/green micro-light-emitting diodes.

We investigated the performance of InGaN-based red/green micro-light-emitting diodes (µLEDs) ranging from 98×98µ to 17×17µ. The average forward voltage at 10/ was independent of the dimension of µLEDs. Red µLEDs exhibited a larger blueshift of the peak wavelength (∼35) and broader full-width at half maximum (≥50) at 2-50/ compared to green µLEDs.

Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes.

We numerically investigated the performance of N-polar AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) with different Al contents in quantum wells (QWs) and barriers. We found that N-polar structures could improve the maximum internal quantum efficiency (IQE) and suppress the efficiency droop, especially for deep-UV LEDs. Compared to metal-polar LEDs, N-polar ones retained higher IQE values even when the acceptor concentrations in the p-layers were one order of magnitude lower.

Photoelectrochemical and crystalline properties of a GaN photoelectrode loaded with α-FeO as cocatalyst.

Nitrides are of particular interest in energy applications given their suitability to photocatalytically generate H from aqueous solutions. However, one of the drawbacks of nitrides is the decomposition they suffer when used in photoelectrochemical cells. Here, we report the improvement of the catalytic performance and chemical stability of a GaN electrode when it is decorated with FeO particles compared with an undecorated electrode.

Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes.

Fabrication of indium tin oxide (ITO) was optimized for InGaN-based amber/red light-emitting diodes (LEDs). A radiofrequency sputtering reduced the sheet resistivity of ITO at low pressures, and a subsequent two-step annealing resulted in a low sheet resistivity (below 2×10 Ωcm) and high transmittance (over 98%) in the amber and red regions between 590 nm to 780 nm. Double ITO layers by sputtering could form an excellent ohmic contact with p-GaN.

Excited-state dynamics of thiophene substituted betaine pyridinium compounds.

This work deals with the photophysics of novel pyridinium betaine based on 2-pyridin-1-yl-1H-benzimidazole (SBPa) substituted symmetrically by mono- (Th2SBPa) and bi-thiophene fragments (Th4SBPa). The study is based on a combination of steady-state, femtosecond transient absorption spectroscopic measurements supported by PCM-(TD)DFT calculations. It is found that the two step ICT process (S0 → S2 excitation followed by S2(CT) → S1(CT) internal conversion) occurring for the parent molecule remains unaffected for Th2SBPa while the situation is less clear for Th4SBPa.

Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN.

The authors studied the photoelectrochemical properties dependent on carrier concentration of n-type GaN. The photocurrent at zero bias became the maximum value at the carrier concentration of 1.7x10(17) cm-3.