Publications by authors named "Kazhihito Nishimura"
Article Synopsis
- Hexagonal boron nitride (h-BN) is highlighted as a promising ultra-wide bandgap semiconductor for solar-blind photodetection due to its excellent properties, including high thermal conductivity.
- A two-dimensional metal-semiconductor-metal photodetector was created using mechanically exfoliated h-BN flakes, demonstrating an ultra-low dark current and impressive detectivity of 1.28 × 10^10 Jones at room temperature.
- The h-BN photodetector also exhibited thermal stability up to 300 °C, which is a significant advantage over traditional semiconductor materials, indicating its potential for high-temperature applications in solar-blind photodetection.
