Decreasing Interface Defect Densities via Silicon Oxide Passivation at Temperatures Below 450 °C.

Low-temperature (LT) passivation methods (<450 °C) for decreasing defect densities in the material combination of silica (SiO) and silicon (Si) are relevant to develop diverse technologies (e.g., electronics, photonics, medicine), where defects of SiO/Si cause losses and malfunctions.