Trade-off between processability and device performance in donor-acceptor semiconductors revealed using discrete siloxane side chains.

Donor-acceptor polymeric semiconductors are crucial for state-of-the-art applications, such as electronic skin mimics. The processability, and thus solubility, of these polymers in benign solvents is critical and can be improved through side chain engineering. Nevertheless, the impact of novel side chains on backbone orientation and emerging device properties often remains to be elucidated.

Electrostatic Control of Insulator-Metal Transition in La-doped SrSnO Films.

We investigate the ion gel gating of wide bandgap oxide, La-doped SrSnO films grown using radical-based molecular beam epitaxy. An applied positive bias resulted in a reversible electrostatic control of sheet resistance over 3 orders of magnitude at low temperature driving sample from Mott variable range hopping to a weakly localized transport. Analysis of low temperature transport behavior revealed electron-electron interaction and weak localization effects to be the dominant scattering mechanisms.