Origin of Extended UV Stability of 2D Atomic Layer Titania-Based Perovskite Solar Cells Unveiled by Ultrafast Spectroscopy.

The inherent instability of UV-induced degradation in TiO-based perovskite solar cells was largely improved by replacing the anatase-phase compact TiO layer with an atomic sheet transport layer (ASTL) of two-dimensional (2D) TiO. The vital role of microscopic carrier dynamics that govern the UV stability of perovskite solar cells was comprehensively examined in this work by performing time-resolved pump-probe spectroscopy. In conventional perovskite solar cells, the presence of a UV-active oxygen vacancy in compact TiO prohibits current generation by heavily trapping electrons after UV degradation.

Dual nanocomposite carrier transport layers enhance the efficiency of planar perovskite photovoltaics.

In photovoltaic devices, more effective transfer of dissociated electrons and holes from the active layer to the respective electrodes will result in higher fill factors and short-circuit current densities and, thus, enhanced power conversion efficiencies (PCEs). Planar perovskite photovoltaics feature an active layer that can provide a large exciton diffusion length, reaching several micrometers, but require efficient carrier transport layers for charge extraction. In this study, we employed two nanocomposite carrier transfer layers-an electron transport layer (ETL) comprising [6,6]phenyl-C-butyric acid methyl ester (PCBM) doped with the small molecule 4,7-diphenyl-1,10-phenanthroline (Bphen), to enhance the electron mobility, and a hole transfer layer (HTL) comprising poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) doped with molybdenum disulfide (MoS) nanosheets, to enhance the hole mobility.

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition.

Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new "paradigm shift" non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min.

A Comprehensive Study of One-Step Selenization Process for Cu(In Ga )Se Thin Film Solar Cells.

In this work, aiming at developing a rapid and environmental-friendly process for fabricating CuIn Ga Se (CIGS) solar cells, we demonstrated the one-step selenization process by using selenium vapor as the atmospheric gas instead of the commonly used HSe gas. The photoluminescence (PL) characteristics indicate that there exists an optimal location with superior crystalline quality in the CIGS thin films obtained by one-step selenization. The energy dispersive spectroscopy (EDS) reveals that the Ga lateral distribution in the one-step selenized CIGS thin film is intimately correlated to the blue-shifted PL spectra.

Family of graphene-assisted resonant surface optical excitations for terahertz devices.

The majority of the proposed graphene-based THz devices consist of a metamaterial that can optically interact with graphene. This coupled graphene-metamaterial system gives rise to a family of resonant modes such as the surface plasmon polariton (SPP) modes of graphene, the geometrically induced SPPs, also known as the spoof SPP modes, and the Fabry-Perot (FP) modes. In the literature, these modes are usually considered separately as if each could only exist in one structure.

Effects of strain on the electronic structure and magnetic properties in SrMn0.5Fe0.5O3.

The electronic structure and magnetic properties of SrMn0.5Fe0.5O3 powder and films grown on (1 0 0)-SrTiO3 (STO) and (1 0 0)-LaAlO3 (LAO) substrates by pulsed laser deposition (PLD) were investigated by temperature dependent magnetization and soft x-ray absorption.

THz emission from organic cocrystalline salt: 2, 6-diaminopyridinium-4-nitrophenolate-4-nitrophenol.

We report few-cycle THz pulses emission from a novel organic crystal 2,6-diaminopyridinium-4-nitrophenolate-4-nitrophenol (DAPNPNP). The observed amplitude of the THz electric field from a DAPNPNP crystal is comparable with that from a ZnTe single crystal under the same optical pumping conditions. Both the waveform and spectra of the THz radiation from DAPNPNP are similar to those from ZnTe.

In-Situ Probing Plasmonic Energy Transfer in Cu(In, Ga)Se2 Solar Cells by Ultrabroadband Femtosecond Pump-Probe Spectroscopy.

In this work, we demonstrated a viable experimental scheme for in-situ probing the effects of Au nanoparticles (NPs) incorporation on plasmonic energy transfer in Cu(In, Ga)Se2 (CIGS) solar cells by elaborately analyzing the lifetimes and zero moment for hot carrier relaxation with ultrabroadband femtosecond pump-probe spectroscopy. The signals of enhanced photobleach (PB) and waned photoinduced absorption (PIA) attributable to surface plasmon resonance (SPR) of Au NPs were in-situ probed in transient differential absorption spectra. The results suggested that substantial carriers can be excited from ground state to lower excitation energy levels, which can reach thermalization much faster with the existence of SPR.

Manifestation of a Second Dirac Surface State and Bulk Bands in THz Radiation from Topological Insulators.

Topological insulators (TIs) are interesting quantum matters that have a narrow bandgap for bulk and a Dirac-cone-like conducting surface state (SS). The recent discovered second Dirac surface state (SS) and bulk bands (BBs) located ~1.5 eV above the first SS are important for optical coupling in TIs.

Ultrafast multi-level logic gates with spin-valley coupled polarization anisotropy in monolayer MoS2.

The inherent valley-contrasting optical selection rules for interband transitions at the K and K' valleys in monolayer MoS2 have attracted extensive interest. Carriers in these two valleys can be selectively excited by circularly polarized optical fields. The comprehensive dynamics of spin valley coupled polarization and polarized exciton are completely resolved in this work.

Toward omnidirectional light absorption by plasmonic effect for high-efficiency flexible nonvacuum Cu(In,Ga)Se2 thin film solar cells.

We have successfully demonstrated a great advantage of plasmonic Au nanoparticles for efficient enhancement of Cu(In,Ga)Se2(CIGS) flexible photovoltaic devices. The incorporation of Au NPs can eliminate obstacles in the way of developing ink-printing CIGS flexible thin film photovoltaics (TFPV), such as poor absorption at wavelengths in the high intensity region of solar spectrum, and that occurs significantly at large incident angle of solar irradiation. The enhancement of external quantum efficiency and photocurrent have been systematically analyzed via the calculated electromagnetic field distribution.

Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition.

In this work, CuIn1 - x Ga x Se2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu2 - x Se, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films.

Non-antireflective scheme for efficiency enhancement of Cu(In,Ga)Se2 nanotip array solar cells.

We present systematic works in characterization of CIGS nanotip arrays (CIGS NTRs). CIGS NTRs are obtained by a one-step ion-milling process by a direct-sputtering process of CIGS thin films (CIGS TF) without a postselenization process. At the surface of CIGS NTRs, a region extending to 100 nm in depth with a lower copper concentration compared to that of CIGS TF has been discovered.

Observation of unusual optical transitions in thin-film Cu(In,Ga)Se2 solar cells.

In this paper, we examine photoluminescence spectra of Cu(In,Ga)Se(2) (CIGS) via temperature-dependent and power-dependent photoluminescence (PL). Donor-acceptor pair (DAP) transition, near-band-edge transition were identified by their activation energies. S-shaped displacement of peak position was observed and was attributed to carrier confinement caused by potential fluctuation.

Observation of unusual optical transitions in thin-film Cu(In,Ga)Se2 solar cells.

In this paper, we examine photoluminescence spectra of Cu(In,Ga)Se(2) (CIGS) via temperature-dependent and power-dependent photoluminescence (PL). Donor-acceptor pair (DAP) transition, near-band-edge transition were identified by their activation energies. S-shaped displacement of peak position was observed and was attributed to carrier confinement caused by potential fluctuation.

Ultrafast carrier dynamics in Cu(In,Ga)Se₂ thin films probed by femtosecond pump-probe spectroscopy.

Ultrafast carrier dynamics in Cu(In,Ga)Se₂ films are investigated using femtosecond pump-probe spectroscopy. Samples prepared by direct sputtering and co-evaporation processes, which exhibited remarkably different crystalline structures and free carrier densities, were found to result in substantially different carrier relaxation and recombination mechanisms. For the sputtered CIGS films, electron-electron scattering and Auger recombination was observed, whereas for the co-evaporated CIGS films, bandgap renormalization accompanied by band filling effect and hot phonon relaxation was observed.

Optimal Te-doping in GaSe for non-linear applications.

Centimeter-sized Te-doped GaSe ingots were grown from the charge compositions of GaSe with nominals 0.05, 0.1, 0.