Floquet engineering of tilted and gapped Dirac bandstructure in 1T[Formula: see text]-MoS[Formula: see text].

We have developed a rigorous theoretical formalism for Floquet engineering, investigating, and subsequently tailoring most crucial electronic properties of 1T[Formula: see text]-MoS[Formula: see text] by applying an external high-frequency dressing field within the off-resonance regime. It was recently demonstrated that monolayer semiconducting 1T[Formula: see text]-MoS[Formula: see text] exhibits tunable and gapped spin- and valley-polarized tilted Dirac bands. The electron-photon dressed states depend strongly on the polarization of the applied irradiation and reflect a full complexity of the low-energy Hamiltonian for non-irradiated material.