Graduate entry to nursing: An exploration of the demographic characteristics of New Zealand students.

This paper describes the characteristics of student enrolled in New Zealand's first Graduate Entry to Practice (GEN) programme. Data were collected from students enrolled in the first five cohorts of the programme from 2014 to 2018 (n = 93). In total 69 students responded to an on-line, self-report survey, resulting in a 74% return rate.

Physical origins of current and temperature controlled negative differential resistances in NbO.

Negative differential resistance behavior in oxide memristors, especially those using NbO, is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a relatively low-temperature non-linear transport mechanism or a high-temperature Mott transition. Resolving this issue will enable consistent and robust predictive modeling of this phenomenon for different applications.

Anatomy of Ag/Hafnia-Based Selectors with 10 Nonlinearity.

A novel Ag/oxide-based threshold switching device with attractive features including ≈10 nonlinearity is developed. High-resolution transmission electron microscopic analysis of the nanoscale crosspoint device suggests that elongation of an Ag nanoparticle under voltage bias followed by spontaneous reformation of a more spherical shape after power off is responsible for the observed threshold switching.

Thermally induced crystallization in NbO thin films.

Niobium dioxide can exhibit negative differential resistance (NDR) in metal-insulator-metal (MIM) devices, which has recently attracted significant interest for its potential applications as a highly non-linear selector element in emerging nonvolatile memory (NVM) and as a locally-active element in neuromorphic circuits. In order to further understand the processing of this material system, we studied the effect of thermal annealing on a 15 nm thick NbO thin film sandwiched inside a nanoscale MIM device and compared it with 180 nm thick blanket NbO (x = 2 and 2.5) films deposited on a silicon dioxide surface as references.

Trilayer Tunnel Selectors for Memristor Memory Cells.

An integrated memory cell with a mem-ristor and a trilayer crested barrier selector, showing repeatable nonlinear current-voltage switching loops is presented. The fully atomic-layer-deposited TaN1+x /Ta2 O5 /TaN1+x crested barrier selector yields a large nonlinearity (>10(4) ), high endurance (>10(8) ), low variability, and low temperature dependence.

Deterministic nanoparticle assemblies: from substrate to solution.

The deterministic assembly of metallic nanoparticles is an exciting field with many potential benefits. Many promising techniques have been developed, but challenges remain, particularly for the assembly of larger nanoparticles which often have more interesting plasmonic properties. Here we present a scalable process combining the strengths of top down and bottom up fabrication to generate deterministic 2D assemblies of metallic nanoparticles and demonstrate their stable transfer to solution.

Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch.

Highly reproducible bipolar resistance switching was recently demonstrated in a composite material of Pt nanoparticles dispersed in silicon dioxide. Here, we examine the electrical performance and scalability of this system and demonstrate devices with ultrafast (<100 ps) switching, long state retention (no measurable relaxation after 6 months), and high endurance (>3 × 10(7) cycles). A possible switching mechanism based on ion motion in the film is discussed based on these observations.