DFT electronic structure investigation of chromium ion-implanted cupric oxide thin films dedicated for photovoltaic absorber layers.

This study explores the enhancement of cupric oxide (CuO) thin films for photovoltaic applications through chromium doping and subsequent annealing. Thin films of CuO were deposited on silicon and glass substrates using reactive magnetron sputtering. Chromium was introduced via ion implantation, and samples were annealed to restore the crystal structure.

Cuprous Oxide Thin Films Implanted with Chromium Ions-Optical and Physical Properties Studies.

Cuprous oxide is a semiconductor with potential for use in photocatalysis, sensors, and photovoltaics. We used ion implantation to modify the properties of CuO oxide. Thin films of CuO were deposited with magnetron sputtering and implanted with low-energy Cr ions of different dosages.

Influence of Cr Ion Implantation on Physical Properties of CuO Thin Films.

Cupric oxide is a semiconductor with applications in sensors, solar cells, and solar thermal absorbers. To improve its properties, the oxide was doped with a metallic element. No studies were previously performed on Cr-doping using the ion implantation technique.