Publications by authors named "Katarzyna Opolczynska"
Article Synopsis
- GaN and hybrid organic-inorganic perovskites like MAPbI are key materials in optoelectronics, influencing fields such as solid-state lighting, high-power electronics, and photovoltaics.
- The study investigates carrier transfer across the MAPbI/GaN interface using contactless electroreflectance, revealing how MAPbI affects the Fermi level position at the surface of GaN.
- Findings indicate that MAPbI shifts the Fermi level deeper in the GaN bandgap, with n-type GaN transferring carriers to MAPbI and p-type GaN receiving carriers from it; the research also presents a self-powered photodetector based on the MAPbI/GaN interface.
Article Synopsis
- Hexagonal boron nitride (h-BN) has gained attention for its potential in various applications, especially in devices that incorporate h-BN/III-V junctions like light emitters and transistors.
- This study focuses on the electronic interactions at the h-BN/GaN interface using contactless electroreflectance (CER) spectroscopy, a non-destructive technique that helps measure the Fermi level and examine charge transport.
- Findings indicate that h-BN increases the surface barrier height of GaN and causes the Fermi level to pin deeper in the band gap, which is attributed to electron transfer from GaN surface states to h-BN’s acceptor states; the study also validates CER as a reliable method for