Sophisticated thin film growth techniques increasingly rely on the addition of a plasma component to open or widen a processing window, particularly at low temperatures. Taking advantage of continued increases in accelerator-based X-ray source brilliance, this real-time study uses X-ray Photon Correlation Spectroscopy (XPCS) to elucidate the nanoscale surface dynamics during Plasma-Enhanced Atomic Layer Deposition (PE-ALD) of an epitaxial indium nitride film. Ultrathin films are synthesized from repeated cycles of alternating self-limited surface reactions induced by temporally separated pulses of the material precursor and plasma reactant, allowing the influence of each on the evolving morphology to be examined.
View Article and Find Full Text PDFInvestigating the relationship between structure and dynamical processes is a central goal in condensed matter physics. Perhaps the most noted relationship between the two is the phenomenon of de Gennes narrowing, in which relaxation times in liquids are proportional to the scattering structure factor. Here, a similar relationship is discovered during the self-organized ion-beam nanopatterning of silicon using coherent x-ray scattering.
View Article and Find Full Text PDFThe properties of artificially grown thin films are strongly affected by surface processes during growth. Coherent X-rays provide an approach to better understand such processes and fluctuations far from equilibrium. Here we report results for vacuum deposition of C on a graphene-coated surface investigated with X-ray Photon Correlation Spectroscopy in surface-sensitive conditions.
View Article and Find Full Text PDFLinear-regime Ar bombardment of Si produces symmetrical ripple structures at ion incidence angles above 45° measured off-normal (Madi 2009 J. Phys.: Condens.
View Article and Find Full Text PDFJ Synchrotron Radiat
November 2017
The recent development of surface growth studies using X-ray photon correlation spectroscopy in a grazing-incidence small-angle X-ray scattering (Co-GISAXS) geometry enables the investigation of dynamical processes during kinetic roughening in greater detail than was previously possible. In order to investigate the Co-GISAXS behavior expected from existing growth models, calculations and (2+1)-dimension simulations of linear Kuramoto-Sivashinsky and non-linear Kardar-Parisi-Zhang surface growth equations are presented which analyze the temporal correlation functions of the height-height structure factor. Calculations of the GISAXS intensity auto-correlation functions are also performed within the Born/distorted-wave Born approximation for comparison with the scaling behavior of the height-height structure factor and its correlation functions.
View Article and Find Full Text PDFIn this work we analyze GISAXS measurements of the structure factor of Si surfaces evolving during 1 keV Ar+ ion bombardment. Using newly-developed methods sensitive to the full range of experimentally-available wavenumbers q, we extract the linear amplification rate R(q) governing surface stability over a range of wavenumbers 4-5 times larger than has previously been obtained. Comparing with theoretical models also retaining full wavenumber-dependence, we find an excellent fit of the experimental data over the full range of irradiation angles and wavenumbers.
View Article and Find Full Text PDFStrontium-doped lanthanum cobalt ferrite (LSCF) is a widely used cathode material due to its high electronic and ionic conductivity, and reasonable oxygen surface exchange coefficient. However, LSCF can have long-term stability issues such as surface segregation of Sr during solid oxide fuel cell (SOFC) operation, which can adversely affect the electrochemical performance. Thus, understanding the nature of the Sr surface segregation phenomenon and how it is affected by the composition of LSCF and strain are critical.
View Article and Find Full Text PDFAtomic layer deposition (ALD) enables the conformal coating of porous materials, making the technique suitable for pore size tuning at the atomic level, e.g., for applications in catalysis, gas separation and sensing.
View Article and Find Full Text PDFThis paper explores the effects of different plasma treatments on low dielectric constant (low-k) materials and the consequences for the growth behavior of atomic layer deposition (ALD) on these modified substrates. An O2 and a He/H2 plasma treatment were performed on SiCOH low-k films to modify their chemical surface groups. Transmission FTIR and water contact angle (WCA) analysis showed that the O2 plasma changed the hydrophobic surface completely into a hydrophilic surface, while the He/H2 plasma changed it only partially.
View Article and Find Full Text PDFUsing real-time grazing-incidence small-angle x-ray scattering, we find that the processes of island formation and coalescence during the room-temperature vapor phase deposition of aluminum lead to dynamical scaling of the evolving surface morphology. The scaling is quantitatively consistent with the self-similarity predicted by the Family-Meakin model, which was developed to describe liquid droplet deposition, growth, and coalescence. The Family-Meakin model assumes only that atomic diffusion over the substrate between islands or droplets is negligible and that diffusion between impinging islands or droplets is sufficient to give complete coalescence.
View Article and Find Full Text PDFHeterogeneous microscale dynamics in the martensitic phase transition of cobalt is investigated with real-time x-ray scattering. During the transformation of the high-temperature face-centered cubic phase to the low-temperature hexagonal close-packed phase, the structure factor evolution suggests that an initial rapid local transformation is followed by a slower period during which strain relaxes. Coherent x-ray scattering measurements performed during the latter part of the transformation show that the kinetics is dominated by discontinuous sudden changes-avalanches.
View Article and Find Full Text PDFAtomic layer deposition (ALD) is a cyclic process which relies on sequential self-terminating reactions between gas phase precursor molecules and a solid surface. The self-limiting nature of the chemical reactions ensures precise film thickness control and excellent step coverage, even on 3D structures with large aspect ratios. At present, ALD is mainly used in the microelectronics industry, e.
View Article and Find Full Text PDFWe show that the "sputter patterning" topographical instability is determined by the effects of ion impact-induced prompt atomic redistribution and that erosion--the consensus predominant cause--is essentially irrelevant. We use grazing incidence small angle x-ray scattering to measure in situ the damping of noise or its amplification into patterns via the linear dispersion relation. A model based on the effects of impact-induced redistribution of those atoms that are not sputtered away explains both the observed ultrasmoothening at low angles from normal incidence and the instability at higher angles.
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