Synthesis, Crystal and Electronic Structures, and Magnetic and Electrical Transport Properties of Bismuthides NdZnBi and (LaRE)ZnBi (RE = Pr or Nd).

Bismuth is a good constituent element for many quantum materials due to its large atomic number, 6s6p orbitals, and strong spin-orbital coupling. In this work, three new bismuthides, NdZnBi, (LaPr)ZnBi, and (LaNd)ZnBi, were grown by a metal flux method, and their crystal structures were accurately determined by single-crystal X-ray diffraction. These new bismuthides belong to the RE-T-Pn (RE = La-Lu, T = Mn, Fe, Co, Ni, or Zn, and Pn = P, As, Sb, or Bi) family, are isostructural, and crystallize in the HfCuSi structure type.