Depth profiling and standardization from the back side of a sample for accurate analyses: Emphasis on quantifying low-fluence, shallow implants in diamond-like carbon.

Rationale: Back-side thinning of wafers is used to eliminate issues with transient sputtering when analyzing near-surface element distributions. Precise and accurate calibrated implants are created by including a standard reference material during the implantation. Combining these methods allows accurate analysis of low-fluence, shallow features even if matrix effects are a concern.

Elemental abundances of major elements in the solar wind as measured in Genesis targets and implications on solar wind fractionation.

We present elemental abundance data of C, N, O, Na, Mg, Al, Ca, and Cr in Genesis silicon targets. For Na, Mg, Al, and Ca, data from three different SW regimes are also presented. Data were obtained by backside depth profiling using Secondary Ion Mass Spectrometry.

Understanding heterogeneity in Genesis diamond-like carbon film using SIMS analysis of implants.

An amorphous diamond-like carbon film deposited on silicon made at Sandia National Laboratory by pulsed laser deposition was one of several solar wind (SW) collectors used by the Genesis Mission (NASA Discovery Class Mission #5). The film was ~1 μm thick, amorphous, anhydrous, and had a high ratio of - bonds (>50%). For 27 months of exposure to space at the first Lagrange point, the collectors were passively irradiated with SW (H fluence ~2 × 10 ions cm; He fluence ~8 × 10 ions cm).