High-quality superconducting α-Ta film sputtered on the heated silicon substrate.

Intrigued by the discovery of the long lifetime in the α-Ta/AlO-based Transmon qubit, researchers recently found α-Ta film is a promising platform for fabricating multi-qubits with long coherence time. To meet the requirements for integrating superconducting quantum circuits, the ideal method is to grow α-Ta film on a silicon substrate compatible with industrial manufacturing. Here we report the α-Ta film sputter-grown on Si (100) with a low-loss superconducting TiN buffer layer.

Fabrication of Al/AlO/Al junctions with high uniformity and stability on sapphire substrates.

Tantalum and aluminum on sapphire are widely used platforms for qubits of long coherent time. As quantum chips scale up, the number of Josephson junctions on sapphire increases. Thus, both the uniformity and stability of the junctions are crucial to quantum devices, such as scalable superconducting quantum computer circuit, and quantum-limited amplifiers.

Heterogeneously integrated flexible microwave amplifiers on a cellulose nanofibril substrate.

Low-cost flexible microwave circuits with compact size and light weight are highly desirable for flexible wireless communication and other miniaturized microwave systems. However, the prevalent studies on flexible microwave electronics have only focused on individual flexible microwave elements such as transistors, inductors, capacitors, and transmission lines. Thinning down supporting substrate of rigid chip-based monolithic microwave integrated circuits has been the only approach toward flexible microwave integrated circuits.

InGaN/GaN microdisks enabled by nanoporous GaN cladding.

The fabrication of nanoporous (NP) GaN is proposed as a generic technique to create out-of-plane index guiding for nitride microcavities. Compared to the conventional undercut technique, the proposed technique forms uniformly a low-index NP-GaN layer beneath the entire microcavity. Therefore, it supports all cavity modes (with different cavity geometries), while the undercut technique only supports the modes that reside at the circumference of a circular microcavity.

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.

Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN/GaN layers while preserving their microstructural quality.

Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities.

Miniaturization of optoelectronic devices offers tremendous performance gain. As the volume of photoactive material decreases, optoelectronic performance improves, including the operation speed, the signal-to-noise ratio, and the internal quantum efficiency. Over the past decades, researchers have managed to reduce the volume of photoactive materials in solar cells and photodetectors by orders of magnitude.

Semipolar (202̅1̅) GaN and InGaN Light-Emitting Diodes Grown on Sapphire.

We have demonstrated growing uniform and purely nitrogen polar semipolar (202̅1̅) GaN epilayers on 2 in. patterned sapphire substrates. The as-grown surface of (202̅1̅) GaN is composed of two stable facets: (101̅0) and (101̅1̅).

Wide bandgap III-nitride nanomembranes for optoelectronic applications.

Single crystalline nanomembranes (NMs) represent a new embodiment of semiconductors having a two-dimensional flexural character with comparable crystalline perfection and optoelectronic efficacy. In this Letter, we demonstrate the preparation of GaN NMs with a freestanding thickness between 90 to 300 nm. Large-area (>5 × 5 mm(2)) GaN NMs can be routinely obtained using a procedure of conductivity-selective electrochemical etching.