Publications by authors named "Kalpathy B Sundaram"

CuGaO thin films were deposited using the RF magnetron sputtering technique using CuO and GaO targets. The films were deposited at room temperature onto a quartz slide. The sputtering power of CuO remained constant at 50 W, while the sputtering power of GaO was systematically varied from 150 W to 200 W.

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The intrinsically anisotropic crystallinity of two-dimensional (2D) transition metal dichalcogenide (2D TMD) layers enables a variety of intriguing material properties which strongly depend on the physical orientation of constituent 2D layers. For instance, 2D TMDs with vertically-aligned layers exhibit numerous dangling bonds on their 2D layer edge sites predominantly exposed on the surface, projecting significantly improved physical and/or chemical adsorption capability compared to their horizontally-oriented 2D layer counterparts. Such property advantages can be further promoted as far as the material can be integrated onto unconventional substrates of tailored geometry/functionality, offering vast opportunities for a wide range of applications which demand enhanced surface area/reactivity and mechanical flexibility.

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Two-dimensional (2D) transition metal dichalcogenide (TMD) layers exhibit superior optical, electrical, and structural properties unattainable in any traditional materials. Many of these properties are known to be controllable via external mechanical inputs, benefiting from their extremely small thickness coupled with large in-plane strain limits. However, realization of such mechanically driven tunability often demands highly complicated engineering of 2D TMD layer structures, which is difficult to achieve on a large wafer scale in a controlled manner.

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A metal-insulator-metal (MIM) structure using boron carbon nitride (BCN) was tested for its UV detection capability. Since BCN is one of the hardest and chemically robust materials, it is expected to be a potential choice for a UV detector in extreme and harsh conditions. The BCN thin films were deposited using a dual target RF magnetron sputtering process.

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