Controllable growth of wafer-lever MoS films by using heating sulfurization treatment.

Few-layer MoS films have garnered significant attention as promising materials for electronic devices and sensors due to their exceptional carrier mobility and tunable bandgap. Although various chemical vapor deposition (CVD) techniques have been employed to fabricate few-layer MoS films, there remains a need for film homogeneity, continuity, and crystalline quality improvements. This research used the TVS method to fabricate large-scale few-layered MoS films.