BEOL Three-Dimensional Stackable Oxide Semiconductor CMOS Inverter with a High Voltage Gain of 233 at Cryogenic Temperatures.

Targeting high-performance computing at cryogenic temperatures, we report back-end-of-line (BEOL)-compatible p-type Te-TeO field effect transistors (FETs) deposited using a sputtering method that is cost-effective, large-scale manufacturable, and highly controllable. Combined with the indium tin oxide channel n-FETs employing a common gate and HfO gate dielectric, BEOL three-dimensional stackable oxide semiconductor complementary metal oxide semiconductor (CMOS) inverters were further realized, demonstrating excellent threshold voltage matching, with a high voltage gain of 132 with a 2 V supply voltage () at room temperature. At cryogenic temperatures, the CMOS inverter exhibits significantly enhanced performance, achieving a voltage gain of 233 at a of 2 V with a wide noise margin of 86%.

Optical Gain Spectrum and Confinement Factor of a Monolayer Semiconductor in an Ultrahigh-Quality Cavity.

Two-dimensional (2D) semiconductors have attracted great attention as a novel class of gain materials for low-threshold, on-chip coherent light sources. Despite several experimental reports on lasing, the underlying gain mechanism of 2D materials remains elusive due to a lack of key information, including modal gain and the confinement factor. Here, we demonstrate a novel approach to directly determine the absorption coefficient of monolayer WS by characterizing the whispering gallery modes in a van der Waals microdisk cavity.

GeSn Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width.

We demonstrate GeSn p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width () on a GeSn-on-insulator (GeSnOI) substrate using a top-down fabrication process. Thanks to the excellent gate control by employing an aggressively scaled nanowire structure, GeSn p-GAAFETs exhibit a small subthreshold swing (SS) of 66 mV/decade, a decent on-current/off-current (/) ratio of ∼1.2 × 10, and a high-field effective hole mobility () of ∼115 cm/(V s).

Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band.

High-performance GeSn multiple-quantum-well (MQW) photodiode is demonstrated on a 200 mm Ge-on-insulator (GeOI) photonics platform for the first time. Both GeSn MQW active layer stack and Ge layer (top Ge layer of GeOI after bonding) were grown using a single epitaxy step on a standard (001)-oriented Si substrate (donor wafer) using a reduced pressure chemical vapor deposition (RPCVD). Direct wafer bonding and layer transfer technique were then employed to transfer the GeSn MQW device layers and Ge layer to a 200 mm SiO-terminated Si handle substrate.

Synthesis of alkyl and aryl C-pyranosides using organozinc reagents via a Ferrier-type rearrangement.

The reaction of 1,2-dihydropyranyl acetates with dimethylzinc, diethylzinc and diphenylzinc in the presence of CF3COOH gave the corresponding alky and aryl C-pyranosides via a Ferrier rearrangement in excellent yields. Use of the organozinc species, CF3CO2ZnPh, reacted with high stereoselectivity to give the phenyl C-glycosides. Arylzinc chlorides could also be successfully applied to this reaction in the presence of BF3.

Addition of organozinc species to cyclic 1,3-diene monoepoxide.

[reaction: see text] The reaction of organozinc reagents (ZnEt(2), ZnPh(2)) with cyclic 1,3-diene monoepoxides in the presence of CF(3)COOH gave the cis-addition products. Lewis acids such as (CF(3)CO(2))(2)Zn and ZnCl(2) mediated the nucleophilic addition of ZnEt(2) to cyclooctadiene monoepoxide with high stereoselectivity.