We demonstrate a split-contact corrugated ridge waveguide InGaAsP distributed feedback laser at 1560 nm. The laser cavity has been defined with uniform third-order gratings etched along the sidewalls of the ridge waveguide. The gratings were fabricated using a standard I-line stepper lithography technique along with an inductively coupled reactive ion-etching process.
View Article and Find Full Text PDFWe report on the design and characterization of a re-growth free InGaAsP/InP multiple quantum well two-electrode laterally coupled distributed feedback (LC-DFB) lasers. Third-order surface etched gratings have been defined on the ridge sidewalls along the laser cavity by means of stepper lithography. The lasers oscillate in single-mode around 1560 nm with high side mode suppression ratios (>52 dB), a wavelength tuning (≥ 3nm), an output power (≥ 6 mW), and narrow linewidth (<170 kHz) under various current injection ranges at room temperature.
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