Improving the External Quantum Efficiency of High-Power GaN-Based Flip-Chip LEDs by Using Sidewall Composite Reflective Micro Structure.

For high-power applications, it is important to improve the light extraction efficiency and light output of the vertical direction of LEDs. Flip-chip LEDs (FCLEDs) with an Ag/SiO/distributed Bragg reflector/SiO composite reflection micro structure (CRS) were fabricated. Compared with the normal Ag-based FCLEDs, the light output power of the CRS-FCLEDs was increased by 6.