Recently, two-dimensional (2D) van der Waals (vdW) magnetic materials have emerged as a promising platform for studying exchange bias (EB) phenomena due to their atomically flat surfaces and highly versatile stacking configurations. Although complex spin configurations between 2D vdW interfaces introduce challenges in understanding their underlying mechanisms, they can offer more possibilities in realizing effective manipulations. In this study, we present a spin-orthogonal arranged 2D FeGaTe (FGaT)/CrSBr vdW heterostructure, realizing the EB effect with the bias field as large as 1730 Oe at 2 K.
View Article and Find Full Text PDFDesigning high-performance polarization-sensitive photodetectors is essential for photonic device applications. Anisotropic one-dimensional (1D) van der Waals (vdW) materials have provided a promising platform to that end. Despite significant advances in 1D vdW photonic devices, their performance is still far from delivering practical potential.
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