Publications by authors named "Kain Lu Low"
Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress.
Nanomaterials (Basel)
September 2024
Article Synopsis
- * This study identified a trap energy level of 0.08 eV, suggesting that interface traps are primarily responsible for the current collapse during semi-on-state stress.
- * Multi-frequency capacitance-voltage (C-V) testing indicated that the density of these interface traps ranges from 1.37×10^13 to 6.07×10^12 cm^-2 eV^-1, with energy levels between 0.29 eV and 0.45 eV.