Investigation of the Contact Characteristics of Silicon-Gold in an Anodic Bonding Structure.

Anodic bonding is broadly utilized to realize the structure support and electrical connection in the process of fabrication and packaging of MEMS devices, and the mechanical and electrical characteristics of the bonded interface of structure exhibit a significant impact on the stability and reliability of devices. For the anodic bonding structure, including the gold electrode of micro accelerometers, the elastic/plastic contact model of a gold-silicon rough surface is established based on Hertz contact theory to gain the contact area and force of Gauss surface bonding. The trans-scale finite element model of a silicon-gold glass structure is built in Workbench through the reconstruction of Gauss surface net by the reverse engineering technique.