Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film.

In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrations and different oxygen vacancy distribution. In addition, the electrical characteristics of CBRAM device with different oxygen concentration are compared and further analyzed with an atomic force microscope and X-ray photoelectron spectrum.

Effect of tungsten doping on the variability of InZnO conductive-bridging random access memory.

The characteristics of conductive-bridging random access memory (CBRAM) with amorphous indium-tungsten-zinc-oxide (a-InWZnO) switching layer and copper (Cu) ion-supply layer were prepared by sputtering. It was found that the doping ratio of tungsten has a significant effect on the memory characteristics of the CBRAM, and the doping of tungsten acts as a suppressor of oxygen vacancies in the InWZnO film. The O 1s binding energy associated with the oxygen-deficient regions in the α-InWZnO thin film decreases with increasing tungsten doping ratio, which can be demonstrated by x-ray photoelectron spectroscopy.

Highly durable and flexible gallium-based oxide conductive-bridging random access memory.

The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/GaO/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>10), low operation voltage, high endurance (>1.4 × 10 cycles), and large retention memory window (>10).

Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems.

In this study, hydrogen peroxide (HO) cosolvent, which was dissolved into supercritical-phase carbon dioxide fluid (SCCO), is employed to passivate excessive oxygen vacancies of the high-mobility tungsten-doped indium oxide without any essential thermal process. With the detailed material analysis, the internal physical mechanism of the cosolvent effect or the interaction between the cosolvent solution and supercritical-phase fluid is well discussed. In addition, the optimized result has been applied for the thin film transistor device fabrication.

Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer.

This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers (BPLs), which were deposited by an ion bombardment-free process. A 10 times increase in mobility was observed and attributed to the generation of donor-like oxygen vacancies at the backchannel, which is induced by the oxygen desorption and Gibbs free energy of the BPL material. The mechanism was well studied by XPS analysis.