Novel Boron-Doped p-Type CuO Thin Films as a Hole-Selective Contact in c-Si Solar Cells.

p-type CuO thin films doped with trivalent cation boron are demonstrated for the first time as an efficient hole-selective layer for c-Si heterojunction solar cells. CuO and CuO:B films were deposited by rf magnetron sputtering, and the optical and electrical properties of the doped and undoped films were investigated. Boron doping enhanced the carrier concentration and the electrical conductivity of the CuO film.

Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures.

This work reports on the role of structure and composition on the determination of the performances of p-type SnO TFTs with a bottom gate configuration deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (O) between 0% and 20% but where the p-type conduction was only observed between in a narrow window, from 2.8% to 3.8%.