Tantalum-Doped TiO Prepared by Atomic Layer Deposition and Its Application in Perovskite Solar Cells.

Tantalum (Ta)-doped titanium oxide (TiO) thin films are grown by plasma enhanced atomic layer deposition (PEALD), and used as both an electron transport layer and hole blocking compact layer of perovskite solar cells. The metal precursors of tantalum ethoxide and titanium isopropoxide are simultaneously injected into the deposition chamber. The Ta content is controlled by the temperature of the metal precursors.

Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells.

In this study, spatial atomic layer deposition (sALD) is employed to prepare titanium dioxide (TiO) thin films by using titanium tetraisopropoxide and water as metal and water precursors, respectively. The post-annealing temperature is varied to investigate its effect on the properties of the TiO films. The experimental results show that the sALD TiO has a similar deposition rate per cycle to other ALD processes using oxygen plasma or ozone oxidant, implying that the growth is limited by titanium tetraisopropoxide steric hindrance.