ZnO/NiO diode-based charge-trapping layer for flash memory featuring low-voltage operation.

A stacked oxide semiconductor of n-type ZnO/p-type NiO with diode behavior was proposed as the novel charge-trapping layer to enable low-voltage flash memory for green electronics. The memory performance outperforms that of other devices with high κ and a nanocrystal-based charge-trapping layer in terms of a large hysteresis memory window of 2.02 V with ±3 V program/erase voltage, a high operation speed of 1.