Designing and fabricating a CdS QDs/BiMoO monolayer S-scheme heterojunction for highly efficient photocatalytic CH degradation under visible light.

Achieving efficient photocatalytic degradation of atmospheric volatile organic compounds (VOCs) under sun-light is still a significant challenge for environmental protection. The S-scheme heterojunction with its unique charge migration route, high charge separation rate and strong redox ability, has great potential. However, how to regulate interfacial charge transfer of the S-scheme heterojunction is of significant importance.

Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator.

We report on the super enhancement of the 1.54 μm Er emission in erbium doped silicon-on-insulator when codoped with oxygen at a ratio of 1:1. This is attributed to a more favourable crystal field splitting in the substitutional tetrahedral site favoured for the singly coordinated case.

Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies.

We report the lattice site and symmetry of optically active Dy and Tm implanted Si. Local symmetry was determined by fitting crystal field parameters (CFPs), corresponding to various common symmetries, to the ground state splitting determined by photoluminescence measurements. These CFP values were then used to calculate the splitting of every J manifold.

n-type chalcogenides by ion implantation.

Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices.

High temperature luminescence of Dy3+ in crystalline silicon in the optical communication and eye-safe spectral regions.

We report on photoluminescence in the 1.3 and 1.7 μm spectral ranges in silicon doped with dysprosium.

An efficient room-temperature silicon-based light-emitting diode.

There is an urgent requirement for an optical emitter that is compatible with standard, silicon-based ultra-large-scale integration (ULSI) technology. Bulk silicon has an indirect energy bandgap and is therefore highly inefficient as a light source, necessitating the use of other materials for the optical emitters. However, the introduction of these materials is usually incompatible with the strict processing requirements of existing ULSI technologies.