Publications by authors named "KM Mertes"

Article Synopsis
  • Frequency-modulation spectroscopy (FMS) is effective for code-division multiplexing and can enhance continuous-wave LIDAR using a specific CO absorption transition at 1.6 µm.
  • This method benefits from coherent detection and effectively reduces interference from broad absorption backgrounds.
  • Future applications could involve detecting multiple transitions simultaneously by using encoded frequency-modulated signals, allowing for improved target distance detection and analysis of absorption signals.
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We present experimental evidence for the spontaneous formation of a macroscopic spin polarization in overlapping regions of two independent Bose-Einstein condensates produced in different hyperfine states of 87Rb. The condensates are independent in the sense that we do not explicitly introduce a relative phase between them. A single "spin-tip" pulse maps the transverse spin polarization into longitudinal spin polarization, and the atomic density distributions are measured with a Stern-Gerlach imaging method.

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In magnetic fields applied parallel to the anisotropy axis, the relaxation of the magnetization of Mn(12)-acetate measured for different sweep rates collapses onto a single scaled curve. The form of the scaling implies that the dominant symmetry-breaking process responsible for tunneling is a locally varying second-order transverse anisotropy, forbidden by tetragonal symmetry in the perfect crystal, which gives rise to a broad distribution of tunnel splittings in a real crystal of Mn(12) acetate. Different forms applied to even- and odd-numbered steps provide a clear distinction between even resonances (associated with crystal anisotropy) and odd resonances (which require a transverse magnetic field).

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For a broad range of electron densities n and temperatures T, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFETs can be scaled onto a universal curve with a single parameter H(sigma)(n,T), where H(sigma) obeys the empirical relation H(sigma) = A(n) [Delta(n)(2)+T2](1/2). The characteristic energy k(B)Delta associated with the magnetic field dependence of the conductivity decreases with decreasing density, and extrapolates to 0 at a critical density n(0), signaling the approach to a zero-temperature quantum phase transition. We show that H(sigma) = AT for densities near n(0).

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Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of 2 increase of the frequency of Shubnikov-de Haas oscillations at H>H(sat). This signals the onset of full spin polarization above H(sat), the parallel field above which the resistivity saturates to a constant value. For H View Article and Find Full Text PDF