Anisotropic photoluminescence of nonpolar ZnO epilayers and ZnO/ZnMgO multiple quantum wells grown on LiGaO substrate.

The temperature-dependent polarized photoluminescence spectra of nonpolar ZnO samples were investigated by 263 nm laser. The degree of polarization (DOP) of m-plane quantum wells changes from 76% at 10 K to 40% at 300 K, which is much higher than that of epilayer. The strong anisotropy was presumably attributed to the enhanced confinement effect of a one-dimension confinement structure formed by the intersection of quantum well and basal stacking fault.

Growth and stability of rocksalt Zn1-xMgxO epilayers and ZnO/MgO superlattice on MgO (100) substrate by molecular beam epitaxy.

Zn1-xMgxO films with x = 0.04-0.50 grown on MgO (100) substrates by molecular beam epitaxy retain the rocksalt (rs) crystal structure and grow epitaxially for x ≥ 0.

Spatial coherence of a polariton condensate.

We perform Young's double-slit experiment to study the spatial coherence properties of a two-dimensional dynamic condensate of semiconductor microcavity polaritons. The coherence length of the system is measured as a function of the pump rate, which confirms a spontaneous buildup of macroscopic coherence in the condensed phase. An independent measurement reveals that the position and momentum uncertainty product of the condensate is close to the Heisenberg limit.

Quantum degenerate exciton-polaritons in thermal equilibrium.

We study the momentum distribution and relaxation dynamics of semiconductor microcavity polaritons by angle-resolved and time-resolved spectroscopy. Above a critical pump level, the thermalization time of polaritons at positive detunings becomes shorter than their lifetime, and the polaritons form a quantum degenerate Bose-Einstein distribution in thermal equilibrium with the lattice.

Magnetic properties of epitaxial Heusler alloy (Co(2/3)Fe(1/3))(3+x)Si(1-x)/GaAs(001) hybrid structures.

The magnetic properties of full Heusler alloy (Co(2/3)Fe(1/3))(3+x)Si(1-x)/GaAs(001) hybrid structures grown by molecular beam epitaxy have been investigated. The magnetic moment, the coercive field and the in-plane magnetic anisotropy of (Co(2/3)Fe(1/3))(3+x)Si(1-x) films with various Si compositions (-0.46≤x≤1) are discussed.

Nonlinear terahertz response of -type GaAs.

Excitation of an n-type GaAs layer by intense ultrashort terahertz pulses causes coherent emission at 2 THz. Phase-resolved nonlinear propagation experiments show a picosecond decay of the emitted field, despite the ultrafast carrier-carrier scattering at a sample temperature of 300 K. While the linear THz response is in agreement with the Drude response of free electrons, the nonlinear response is dominated by the super-radiant decay of optically inverted impurity transitions.

Composition fluctuations in dilute nitride (Ga,In)(N,As)/GaAs heterostructures measured by low-loss electron energy-loss spectroscopy.

We report on the investigation of composition fluctuations in epitaxially grown (Ga,In)(N,As) epilayers on GaAs(001) substrates by using electron energy-loss spectroscopy (EELS). The N and In concentrations are determined locally with a probe size of about 8 nm from the low-loss EELS measurements. We demonstrate that the small amount of N incorporating in dilute nitride alloys can be measured quantitatively by the plasmon energy shift with respect to a GaAs reference, and that the In content is analyzed simultaneously from the In 4d transitions, which have been isolated from the overlapping Ga 3d transitions.

Coherent spin transport through dynamic quantum dots.

Spin transport and manipulation in semiconductors have been studied intensively with the ultimate goal of realizing spintronic devices. Previous work in GaAs has focused on controlling the carrier density, crystallographic orientation and dimensionality to limit the electron spin decoherence and allow transport over long distances. Here, we introduce a new method for the coherent transport of spin-polarized electronic wave packets using dynamic quantum dots (DQDs) created by the piezoelectric field of coherent acoustic phonons.

Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111).

Self-assembled columnar AlGaN/GaN nanocavities, with an active region of GaN quantum disks embedded in an AlGaN nanocolumn and cladded by top and bottom AlN/GaN Bragg mirrors, were grown. The nanocavity has no cracks or extended defects, due to the relaxation at the Si interface and to the nanocolumn free-surface to volume ratio. The emission from the active region matched the peak reflectivity by tuning the Al content and the GaN disks thickness.

Polarization of valence band holes in the (Ga,Mn)as diluted magnetic semiconductor.

We report on direct measurements of the impurity band hole polarization in the diluted magnetic semiconductor (Ga,Mn)As. The polarization of impurity band holes in a magnetic field is strongly enhanced by antiferromagnetic exchange interaction with Mn ions. The temperature dependence of the hole polarization shows a strong increase of this polarization below the Curie temperature.

Colossal magnetic moment of Gd in GaN.

We investigate the magnetic properties of epitaxial GaN:Gd layers as a function of the external magnetic field and temperature. An unprecedented magnetic moment is observed in this diluted magnetic semiconductor. The average value of the moment per Gd atom is found to be as high as 4000 micro(B) as compared to its atomic moment of 8 micro(B).

Spin filtering in a hybrid ferromagnetic-semiconductor microstructure.

We fabricated a hybrid structure in which cobalt and permalloy micromagnets produce a local in-plane spin-dependent potential barrier for high-mobility electrons at the GaAs/AlGaAs interface. Spin effects are observed in ballistic transport in the range of tens of mT of the external field and are attributed to switching between Zeeman and Stern-Gerlach modes--the former dominating at low electron densities.

Phase-resolved nonlinear response of a two-dimensional electron gas under femtosecond intersubband excitation.

Strong electric-field transients resonant to intersubband transitions in n-type modulation-doped GaAs/AlGaAs quantum wells induce coherent Rabi oscillations, which are demonstrated by a phase-resolved measurement of the light emitted by the sample. The time evolution of the intersubband polarization is influenced by Coulomb-mediated many-body effects. The subpicosecond period and the phase of the Rabi oscillations are controlled by the properties of the midinfrared driving pulse.

Quantum confinement in monatomic Cu chains on Cu(111).

The existence of one-dimensional (1D) electronic states in Cu/Cu(111) chains assembled by atomic manipulation is revealed by low-temperature scanning tunneling spectroscopy and density functional theory (DFT) calculations. Our experimental analysis of the chain-localized electron dynamics shows that the dispersion is fully described within a 1D tight-binding approach. DFT calculations confirm the confinement of unoccupied states to the chain in the relevant energy range, along with a significant extension of these states into the vacuum region.

Magnetologic with alpha-MnAs thin films.

Taking advantage of the spin information in present day computing is expected to yield an enormous increase in efficiency. A promising ferromagnetic material compatible with semiconductors for room temperature applications is MnAs. By sensitive cantilever beam magnetometry, we discovered that alpha-MnAs films on GaAs(001) exhibit an additional small out-of-plane component of the magnetization which is magnetically coupled with the dominant in-plane magnetization.

Ferromagnetism of MnAs studied by heteroepitaxial films on GaAs(001).

Thin epitaxial films of MnAs--promising candidates for the spin injection into semiconductors--are well known to undergo simultaneously a first-order structural and magnetic phase transition at 10-40 degrees C. The evolution of stress and magnetization of MnAs/GaAs(001), both measured quantitatively with our cantilever beam magnetometer at the coexistence region of alpha-MnAs and beta-MnAs, reveal an orthorhombically distorted unit cell of the ferromagnetic phase, which provides important clues on the origin of ferromagnetism in MnAs.

Programmable computing with a single magnetoresistive element.

The development of transistor-based integrated circuits for modern computing is a story of great success. However, the proved concept for enhancing computational power by continuous miniaturization is approaching its fundamental limits. Alternative approaches consider logic elements that are reconfigurable at run-time to overcome the rigid architecture of the present hardware systems.

Two-dimensional coarsening kinetics of reconstruction domains: GaAs(001)-beta(2 x 4).

We study the nonconserved coarsening kinetics of a reconstructed semiconductor surface. The domain size evolution is obtained in situ by time-resolved surface x-ray diffraction. The system exhibits four equivalent domain types with two nonequivalent types of domain boundaries.

Transport and lifetime enhancement of photoexcited spins in GaAs by surface acoustic waves.

We demonstrate spin transport and spin lifetime enhancement in GaAs quantum wells induced by the traveling piezoelectric field of a surface acoustic wave (SAW). Spin transport lengths of about 3 microm corresponding to spin relaxation times during transport over 1 ns are observed, which are considerably longer than the exciton spin diffusion lengths in the absence of a SAW. The slow spin relaxation is attributed to a reduced electron-hole exchange interaction, when the carriers are spatially separated by the lateral potential modulation induced by the SAW.

Quantum mechanical repulsion of exciton levels in a disordered quantum well.

Spatially resolved photoluminescence spectra of a single quantum well are recorded by near-field spectroscopy. A set of over four hundred spectra displaying sharp emission lines from localized excitons is subject to a statistical analysis of the two-energy autocorrelation function. An accurate comparison with a quantum theory of the exciton center-of-mass motion in a two-dimensional spatially correlated disordered potential reveals clear signatures of quantum mechanical energy level repulsion, giving the spatial and energetic correlations of excitons in disordered quantum systems.

Room-temperature spin injection from Fe into GaAs.

Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.

Time-resolved near-field optics: exciton transport in semiconductor nanostructures.

We present a systematic, temperature-dependent study of excitonic real-space transfer into single GaAs quantum wires using time-resolved low-temperature near-field luminescence spectroscopy. Excitons generated by local short pulse optical excitation in a 250 nm spot undergo diffusive transport over a length of several micrometres and are subsequently trapped into the quantum wire by optical phonon emission. The effect of local energy barriers in the vicinity of the quantum wire on the real-space transfer dynamics is monitored directly by mapping the time-resolved quantum wire luminescence.

Femtosecond near-field spectroscopy: carrier relaxation and transport in single quantum wires.

Quasi-two-colour femtosecond pump and probe spectroscopy and near-field scanning optical microscopy are combined to study the carrier dynamics in single semiconductor nanostructures. In temporally, spectrally and spatially resolved measurements with a time resolution of 200 fs and a spatial resolution of 200 nm, the non-linear change in reflectivity of a single quantum wire is mapped in real space and time. The experiments show that carrier relaxation into a single quantum wire occurs on a 100 fs time scale at room temperature.