SiN-plasmonic ferroelectric MZIR modulator for 112-Gbaud PAM-4 transmission in the O-band.

This paper presents a simulation-based analysis on the performance of plasmonic ferroelectric Mach-Zehnder in a ring (MZIR) versus symmetric Mach-Zehnder modulators (MZMs) on SiN targeting O-band operation. The detailed investigation reveals the tradeoff between Au and Ag legacy noble metals providing lower modulator losses and CMOS compatible Cu featuring low cost. The numerical models also show that by opting for the MZIR layout there is a reduction in the V x L product of 46% for Ag, 39% for Au and 30% for Cu versus MZMs.

Efficient multi-step coupling between SiN waveguides and CMOS plasmonic ferroelectric phase shifters in the O-band.

In this paper we present a thorough simulation-based analysis for the design of multi-step couplers bridging seamlessly plasmonic barium titanate oxide (BTO) ferroelectric phase shifters and thick silicon nitride (SiN) waveguides for the O-band. The targeted plasmonic waveguides are a hybrid plasmonic waveguide (HPW) providing low propagation losses and a plasmonic metal-insulator-metal (MIM) slot waveguide offering a high confinement factor for high modulation efficiency. The proposed plasmonic platforms are formed by Copper (Cu) providing CMOS compatibility.

Temperature and wavelength drift tolerant WDM transmission and routing in on-chip silicon photonic interconnects.

We demonstrate a temperature and wavelength shift resilient silicon transmission and routing interconnect system suitable for multi-socket interconnects, utilizing a dual-strategy CLIPP feedback circuitry that safeguards the operating point of the constituent photonic building blocks along the entire on-chip transmission-multiplexing-routing chain. The control circuit leverages a novel control power-independent and calibration-free locking strategy that exploits the 2 derivative of ring resonator modulators (RMs) transfer function to lock them close to the point of minimum transmission penalty. The system performance was evaluated on an integrated Silicon Photonics 2-socket demonstrator, enforcing control over a chain of RM-MUX-AWGR resonant structures and stressed against thermal and wavelength shift perturbations.

Design of Si-rich nitride interposer waveguides for efficient light coupling from InP-based QD-emitters to SiN waveguides on a silicon substrate.

In this paper, we present a systematic analysis for the design of Si-rich-nitride (SRN) based interposer waveguide layers interfacing InP-based devices and SiN waveguides, towards monolithic co-integration of active and passive elements through a Back-End-Of-Line process. The investigation is performed via extensive 2D-eigenvalue and 3D-FDTD electromagnetic simulations and focuses on three different interposer designs, where performance in terms of coupling loss and back reflections is exchanged for fabrication complexity. In addition, a tolerance analysis is performed for the demonstration of the proposed coupling scheme's resilience to fabrication misalignments.