Analysis of structural stability of Ar ion-implanted Pd/Zr/Pd/Ti/Pd multilayer stack in hydrogen annealing environment.

The influence of 150 keV argon ions at fluences in the range of 1 × 10-1 × 10 ions/cm on the stability of the multilayer stack Pd/Zr/Pd/Ti/Pd thin films system, deposited on Ti and TiAlV substrates, under thermal annealing in an H environment was investigated. For samples deposited on Ti substrate, RBS revealed structural instability that increases with fluence. This is evidenced by a decrease in the intensity of layers accompanied by increased consumption of the Pd layers.