Ultrasmall-scale semiconductor devices (≤5 nm) are advancing technologies, such as artificial intelligence and the Internet of Things. However, the further scaling of these devices poses critical challenges, such as interface properties and oxide quality, particularly at the high-/semiconductor interface in metal-oxide-semiconductor (MOS) devices. Existing interlayer (IL) methods, typically exceeding 1 nm thickness, are unsuitable for ultrasmall-scale devices.
View Article and Find Full Text PDFThe exploration of van der Waals (vdW) materials, renowned for their unique optical properties, is pivotal for advanced photonics. These materials exhibit exceptional optical anisotropy, both in-plane and out-of-plane, making them an ideal platform for novel photonic applications. However, the manual search for vdW materials with giant optical anisotropy is a labor-intensive process unsuitable for the fast screening of materials with unique properties.
View Article and Find Full Text PDFAs the trajectory toward the graphene era continues, there is a compelling need to harness 2D technology further for the transformation of three-dimensional (3D) materials production and applications. Here, we resolve this challenge for one of the most widely utilized 3D materials in modern electronics─gold─using graphene-inspired fabrication technology that allows us to develop a multistep production method of ultrathin gold films. Such films demonstrate continuous morphology, low sheet resistance (10 Ω/sq), and high transparency (80%), offering opportunities in a variety of technological and scientific sectors.
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